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Title: Infrared (IR) photon-sensitive spectromicroscopy in a cryogenic environment

Abstract

A system designed to suppress thermal radiation background and to allow IR single-photon sensitive spectromicroscopy of small samples by using both absorption, reflection, and emission/luminescence measurements. The system in one embodiment includes: a light source; a plurality of cold mirrors configured to direct light along a beam path; a cold or warm sample holder in the beam path; windows of sample holder (or whole sample holder) are transparent in a spectral region of interest, so they do not emit thermal radiation in the same spectral region of interest; a cold monochromator or other cold spectral device configured to direct a selected fraction of light onto a cold detector; a system of cold apertures and shields positioned along the beam path to prevent unwanted thermal radiation from arriving at the cold monochromator and/or the detector; a plurality of optical, IR and microwave filters positioned along the beam path and configured to adjust a spectral composition of light incident upon the sample under investigation and/or on the detector; a refrigerator configured to maintain the detector at a temperature below 1.0K; and an enclosure configured to: thermally insulate the light source, the plurality of mirrors, the sample holder, the cold monochromator and themore » refrigerator.« less

Inventors:
Publication Date:
Research Org.:
Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1257244
Patent Number(s):
9,366,574
Application Number:
14/642,631
Assignee:
Lawrence Livermore National Security, LLC (Livermore, CA) LLNL
DOE Contract Number:
AC52-07NA27344
Resource Type:
Patent
Resource Relation:
Patent File Date: 2015 Mar 09
Country of Publication:
United States
Language:
English
Subject:
47 OTHER INSTRUMENTATION; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS

Citation Formats

Pereverzev, Sergey. Infrared (IR) photon-sensitive spectromicroscopy in a cryogenic environment. United States: N. p., 2016. Web.
Pereverzev, Sergey. Infrared (IR) photon-sensitive spectromicroscopy in a cryogenic environment. United States.
Pereverzev, Sergey. 2016. "Infrared (IR) photon-sensitive spectromicroscopy in a cryogenic environment". United States. doi:. https://www.osti.gov/servlets/purl/1257244.
@article{osti_1257244,
title = {Infrared (IR) photon-sensitive spectromicroscopy in a cryogenic environment},
author = {Pereverzev, Sergey},
abstractNote = {A system designed to suppress thermal radiation background and to allow IR single-photon sensitive spectromicroscopy of small samples by using both absorption, reflection, and emission/luminescence measurements. The system in one embodiment includes: a light source; a plurality of cold mirrors configured to direct light along a beam path; a cold or warm sample holder in the beam path; windows of sample holder (or whole sample holder) are transparent in a spectral region of interest, so they do not emit thermal radiation in the same spectral region of interest; a cold monochromator or other cold spectral device configured to direct a selected fraction of light onto a cold detector; a system of cold apertures and shields positioned along the beam path to prevent unwanted thermal radiation from arriving at the cold monochromator and/or the detector; a plurality of optical, IR and microwave filters positioned along the beam path and configured to adjust a spectral composition of light incident upon the sample under investigation and/or on the detector; a refrigerator configured to maintain the detector at a temperature below 1.0K; and an enclosure configured to: thermally insulate the light source, the plurality of mirrors, the sample holder, the cold monochromator and the refrigerator.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = 2016,
month = 6
}

Patent:

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  • The invention comprises a combination of a low resistivity, or electrically conducting, silicon layer that is transparent to long or short wavelength photons and is attached to the backside of a photon-sensitive layer of silicon, such as a silicon wafer or chip. The window is applied to photon sensitive silicon devices such as photodiodes, charge-coupled devices, active pixel sensors, low-energy x-ray sensors and other radiation detectors. The silicon window is applied to the back side of a photosensitive silicon wafer or chip so that photons can illuminate the device from the backside without interference from the circuit printed on themore » frontside. A voltage sufficient to fully deplete the high-resistivity photosensitive silicon volume of charge carriers is applied between the low-resistivity back window and the front, patterned, side of the device. This allows photon-induced charge created at the backside to reach the front side of the device and to be processed by any circuitry attached to the front side. Using the inventive combination, the photon sensitive silicon layer does not need to be thinned beyond standard fabrication methods in order to achieve full charge-depletion in the silicon volume. In one embodiment, the inventive backside window is applied to high resistivity silicon to allow backside illumination while maintaining charge isolation in CCD pixels.« less
  • An electron multiplier is described which is formed by at least two microchannel plates which are arranged one above the other and which operate in the saturation mode. The second microchannel plate produces an output charge for each incident electron which depends on the electrical field in the vicinity of the input surface of said second plate. By suitable geometrical structure in the plate or by shaping the potential applied thereto, an electrical field is produced which varies from point to point on its input surface. The charge output thus contains information regarding the location of the incident electron.
  • The invention comprises a combination of a low resistivity, or electrically conducting, silicon layer that is transparent to long or short wavelength photons and is attached to the backside of a photon-sensitive layer of silicon, such as a silicon wafer or chip. The window is applied to photon sensitive silicon devices such as photodiodes, charge-coupled devices, active pixel sensors, low-energy x-ray sensors and other radiation detectors. The silicon window is applied to the back side of a photosensitive silicon wafer or chip so that photons can illuminate the device from the backside without interference from the circuit printed on themore » frontside. A voltage sufficient to fully deplete the high-resistivity photosensitive silicon volume of charge carriers is applied between the low-resistivity back window and the front, patterned, side of the device. This allows photon-induced charge created at the backside to reach the front side of the device and to be processed by any circuitry attached to the front side. Using the inventive combination, the photon sensitive silicon layer does not need to be thinned beyond standard fabrication methods in order to achieve full charge-depletion in the silicon volume. In one embodiment, the inventive backside window is applied to high resistivity silicon to allow backside illumination while maintaining charge isolation in CCD pixels.« less
  • Systems and methods for infrared detection are described. An optomechanical photon detector includes a semiconductor material and is based on measurement of a photoinduced lattice strain. A multicolor infrared sensor includes a stack of frequency specific optomechanical detectors. The stack can include one, or more, of the optomechanical photon detectors that function based on the measurement of photoinduced lattice strain. The systems and methods provide advantages in that rapid, sensitive multicolor infrared imaging can be performed without the need for a cooling subsystem.
  • Systems and methods for infrared detection are described. An optomechanical photon detector includes a semiconductor material and is based on measurement of a photoinduced lattice strain. A multicolor infrared sensor includes a stack of frequency specific optomechanical detectors. The stack can include one, or more, of the optomechanical photon detectors that function based on the measurement of photoinduced lattice strain. The systems and methods provide advantages in that rapid, sensitive multicolor infrared imaging can be performed without the need for a cooling subsystem.