Carrier density and compensation in semiconductors with multiple dopants and multiple transition energy levels: Case of Cu impurities in CdTe

doi:https://doi.org/10.1103/PhysRevB.83.245207

Title: Carrier density and compensation in semiconductors with multiple dopants and multiple transition energy levels: Case of Cu impurities in CdTe

Authors:: Ma, Jie; Wei, Su-Huai; Gessert, T. A.; Chin, Ken K.

Publication Date:: 2011-06-01

Research Org.:: National Renewable Energy Lab. (NREL), Golden, CO (United States)

Sponsoring Org.:: USDOE Office of Energy Efficiency and Renewable Energy (EERE)

OSTI Identifier:: 1256856

Report Number(s):: NREL/JA-5900-51587
Journal ID: ISSN 1098-0121

DOE Contract Number:: AC36-08GO28308

Resource Type:: Journal Article

Journal Name:: Physical Review. B, Condensed Matter and Materials Physics

Additional Journal Information:: Journal Volume: 83; Journal Issue: 24; Related Information: Physical Review. B, Condensed Matter and Materials Physics; Journal ID: ISSN 1098-0121

Publisher:: American Physical Society (APS)

Country of Publication:: United States

Language:: English

Subject:: 14 SOLAR ENERGY; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; charge carriers; doping; multiple dopants; energy levels

Citation Formats


                    Ma, Jie, Wei, Su-Huai, Gessert, T. A., and Chin, Ken K. Carrier density and compensation in semiconductors with multiple dopants and multiple transition energy levels: Case of Cu impurities in CdTe.  United States: N. p., 2011. 
        Web.  doi:10.1103/PhysRevB.83.245207.

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                    Ma, Jie, Wei, Su-Huai, Gessert, T. A., & Chin, Ken K. Carrier density and compensation in semiconductors with multiple dopants and multiple transition energy levels: Case of Cu impurities in CdTe.  United States.  https://doi.org/10.1103/PhysRevB.83.245207

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                    Ma, Jie, Wei, Su-Huai, Gessert, T. A., and Chin, Ken K. Wed .  
        "Carrier density and compensation in semiconductors with multiple dopants and multiple transition energy levels: Case of Cu impurities in CdTe".  United States.  https://doi.org/10.1103/PhysRevB.83.245207.

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@article{osti_1256856,

  title        = {Carrier density and compensation in semiconductors with multiple dopants and multiple transition energy levels: Case of Cu impurities in CdTe},

  author       = {Ma, Jie and Wei, Su-Huai and Gessert, T. A. and Chin, Ken K.},

  abstractNote = {},

  doi          = {10.1103/PhysRevB.83.245207},

  url          = {https://www.osti.gov/biblio/1256856},
  journal      = {Physical Review. B, Condensed Matter and Materials Physics},

  issn         = {1098-0121},

  number       = 24,

  volume       = 83,

  place        = {United States},

  year         = {2011},

  month        = {6}

}

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Works referenced in this record:

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Similar Records

Title: Carrier density and compensation in semiconductors with multiple dopants and multiple transition energy levels: Case of Cu impurities in CdTe

Citation Formats

Overcoming the doping bottleneck in semiconductors journal, August 2004

Chemical trends of defect formation and doping limit in II-VI semiconductors: The case of CdTe journal, October 2002

Fermi-Level-Pinning Defects in Highly n -Doped Silicon journal, December 1997

Polycrystalline CdTe thin films for photovoltaic applications journal, December 2006

Defects in wide band gap II-VI crystals journal, November 1997

Atomic-scale imaging of individual dopant atoms and clusters in highly n-type bulk Si journal, April 2002

40% efficient metamorphic GaInP∕GaInAs∕Ge multijunction solar cells journal, April 2007

Dependence of carrier lifetime on Cu-contacting temperature and ZnTe:Cu thickness in CdS/CdTe thin film solar cells journal, February 2009

Optical Detection of Cyclotron Resonance in Semiconductors journal, December 1980

High-efficiency polycrystalline CdTe thin-film solar cells journal, December 2004

Analysis of CdS/CdTe devices incorporating a ZnTe:Cu/Ti Contact journal, May 2007

A method for the calculation of defect equilibrium journal, February 1999

Limiting efficiencies of ideal single and multiple energy gap terrestrial solar cells journal, August 1980

Overcoming the doping bottleneck in semiconductors
journal, August 2004

Chemical trends of defect formation and doping limit in II-VI semiconductors: The case of CdTe
journal, October 2002

Fermi-Level-Pinning Defects in Highly n -Doped Silicon
journal, December 1997

Polycrystalline CdTe thin films for photovoltaic applications
journal, December 2006

Defects in wide band gap II-VI crystals
journal, November 1997

Atomic-scale imaging of individual dopant atoms and clusters in highly n-type bulk Si
journal, April 2002

40% efficient metamorphic GaInP∕GaInAs∕Ge multijunction solar cells
journal, April 2007

Dependence of carrier lifetime on Cu-contacting temperature and ZnTe:Cu thickness in CdS/CdTe thin film solar cells
journal, February 2009

Optical Detection of Cyclotron Resonance in Semiconductors
journal, December 1980

High-efficiency polycrystalline CdTe thin-film solar cells
journal, December 2004

Analysis of CdS/CdTe devices incorporating a ZnTe:Cu/Ti Contact
journal, May 2007

A method for the calculation of defect equilibrium
journal, February 1999

Limiting efficiencies of ideal single and multiple energy gap terrestrial solar cells
journal, August 1980