Carrier density and compensation in semiconductors with multiple dopants and multiple transition energy levels: Case of Cu impurities in CdTe

Ma, Jie; Wei, Su-Huai; Gessert, T. A.; Chin, Ken K.

doi:10.1103/PhysRevB.83.245207

Title: Carrier density and compensation in semiconductors with multiple dopants and multiple transition energy levels: Case of Cu impurities in CdTe

Journal Article · Wed Jun 01 00:00:00 EDT 2011 · Physical Review. B, Condensed Matter and Materials Physics

DOI:https://doi.org/10.1103/PhysRevB.83.245207· OSTI ID:1256856

Ma, Jie; Wei, Su-Huai; Gessert, T. A.; Chin, Ken K.

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Research Organization:: National Renewable Energy Lab. (NREL), Golden, CO (United States)

Sponsoring Organization:: USDOE Office of Energy Efficiency and Renewable Energy (EERE)

DOE Contract Number:: AC36-08GO28308

OSTI ID:: 1256856

Report Number(s):: NREL/JA-5900-51587

Journal Information:: Physical Review. B, Condensed Matter and Materials Physics, Vol. 83, Issue 24; Related Information: Physical Review. B, Condensed Matter and Materials Physics; ISSN 1098-0121

Publisher:: American Physical Society (APS)

Country of Publication:: United States

Language:: English

References (13)

Overcoming the doping bottleneck in semiconductors Wei, Su-Huai Computational Materials Science, Vol. 30, Issue 3-4 https://doi.org/10.1016/j.commatsci.2004.02.024	journal	August 2004
Chemical trends of defect formation and doping limit in II-VI semiconductors: The case of CdTe Wei, Su-Huai; Zhang, S. B. Physical Review B, Vol. 66, Issue 15 https://doi.org/10.1103/PhysRevB.66.155211	journal	October 2002
Fermi-Level-Pinning Defects in Highly n -Doped Silicon Chadi, D. J.; Citrin, P. H.; Park, C. H. Physical Review Letters, Vol. 79, Issue 24 https://doi.org/10.1103/PhysRevLett.79.4834	journal	December 1997
Polycrystalline CdTe thin films for photovoltaic applications Bosio, Alessio; Romeo, Nicola; Mazzamuto, Samantha Progress in Crystal Growth and Characterization of Materials, Vol. 52, Issue 4, p. 247-279 https://doi.org/10.1016/j.pcrysgrow.2006.09.001	journal	December 2006
Defects in wide band gap II-VI crystals Neumark, G. F. Materials Science and Engineering: R: Reports, Vol. 21, Issue 1 https://doi.org/10.1016/S0927-796X(97)00008-9	journal	November 1997
Atomic-scale imaging of individual dopant atoms and clusters in highly n-type bulk Si Voyles, P. M.; Muller, D. A.; Grazul, J. L. Nature, Vol. 416, Issue 6883 https://doi.org/10.1038/416826a	journal	April 2002
40% efficient metamorphic GaInP∕GaInAs∕Ge multijunction solar cells King, R. R.; Law, D. C.; Edmondson, K. M. Applied Physics Letters, Vol. 90, Issue 18 https://doi.org/10.1063/1.2734507	journal	April 2007
Dependence of carrier lifetime on Cu-contacting temperature and ZnTe:Cu thickness in CdS/CdTe thin film solar cells Gessert, T. A.; Metzger, W. K.; Dippo, P. Thin Solid Films, Vol. 517, Issue 7, p. 2370-2373 https://doi.org/10.1016/j.tsf.2008.11.008	journal	February 2009
Optical Detection of Cyclotron Resonance in Semiconductors Romestain, R.; Weisbuch, C. Physical Review Letters, Vol. 45, Issue 25 https://doi.org/10.1103/PhysRevLett.45.2067	journal	December 1980
High-efficiency polycrystalline CdTe thin-film solar cells Wu, Xuanzhi Solar Energy, Vol. 77, Issue 6 https://doi.org/10.1016/j.solener.2004.06.006	journal	December 2004
Analysis of CdS/CdTe devices incorporating a ZnTe:Cu/Ti Contact Gessert, T. A.; Asher, S.; Johnston, S. Thin Solid Films, Vol. 515, Issue 15, p. 6103-6106 https://doi.org/10.1016/j.tsf.2006.12.107	journal	May 2007
A method for the calculation of defect equilibrium Lott, K.; Türn, L. Journal of Crystal Growth, Vol. 197, Issue 3 https://doi.org/10.1016/S0022-0248(98)00793-3	journal	February 1999
Limiting efficiencies of ideal single and multiple energy gap terrestrial solar cells Henry, C. H. Journal of Applied Physics, Vol. 51, Issue 8 https://doi.org/10.1063/1.328272	journal	August 1980

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71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
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References (13)

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