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Title: Direct observation of localized radial oxygen migration in functioning tantalum oxide memristors

Abstract

Oxygen migration in tantalum oxide, a promising next-generation storage material, is studied using in operando x-ray absorption spectromicroscopy and is used to microphysically describe accelerated evolution of conduction channel and device failure. Furthermore, the resulting ring-like patterns of oxygen concentration are modeled using thermophoretic forces and Fick diffusion, establishing the critical role of temperature-activated oxygen migration that has been under question lately.

Authors:
 [1];  [2];  [2];  [2]; ;  [3];  [4];  [5];  [2]
  1. Hewlett Packard Labs., Palo Alto, CA (United States); Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Advanced Light Source (ALS)
  2. Hewlett Packard Labs., Palo Alto, CA (United States)
  3. Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Advanced Light Source (ALS)
  4. SLAC National Accelerator Lab., Menlo Park, CA (United States)
  5. Stanford Univ., Stanford, CA (United States)
Publication Date:
Research Org.:
SLAC National Accelerator Lab., Menlo Park, CA (United States); Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1256642
Alternate Identifier(s):
OSTI ID: 1393039
Report Number(s):
SLAC-PUB-16544
Journal ID: ISSN 0935-9648; arXiv:1602.01204
Grant/Contract Number:  
AC02-76SF00515; AC02-05CH11231
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
Advanced Materials
Additional Journal Information:
Journal Volume: 28; Journal Issue: 14; Journal ID: ISSN 0935-9648
Publisher:
Wiley
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ENG; MATSCI; SYNCHRAD

Citation Formats

Kumar, Suhas, Graves, Catherine E., Strachan, John Paul, Grafals, Emmanuelle Merced, Arthur L. David Kilcoyne, Tyliszczak, Tolek, Weker, Johanna Nelson, Nishi, Yoshio, and Williams, R. Stanley. Direct observation of localized radial oxygen migration in functioning tantalum oxide memristors. United States: N. p., 2016. Web. doi:10.1002/adma.201505435.
Kumar, Suhas, Graves, Catherine E., Strachan, John Paul, Grafals, Emmanuelle Merced, Arthur L. David Kilcoyne, Tyliszczak, Tolek, Weker, Johanna Nelson, Nishi, Yoshio, & Williams, R. Stanley. Direct observation of localized radial oxygen migration in functioning tantalum oxide memristors. United States. doi:10.1002/adma.201505435.
Kumar, Suhas, Graves, Catherine E., Strachan, John Paul, Grafals, Emmanuelle Merced, Arthur L. David Kilcoyne, Tyliszczak, Tolek, Weker, Johanna Nelson, Nishi, Yoshio, and Williams, R. Stanley. Tue . "Direct observation of localized radial oxygen migration in functioning tantalum oxide memristors". United States. doi:10.1002/adma.201505435. https://www.osti.gov/servlets/purl/1256642.
@article{osti_1256642,
title = {Direct observation of localized radial oxygen migration in functioning tantalum oxide memristors},
author = {Kumar, Suhas and Graves, Catherine E. and Strachan, John Paul and Grafals, Emmanuelle Merced and Arthur L. David Kilcoyne and Tyliszczak, Tolek and Weker, Johanna Nelson and Nishi, Yoshio and Williams, R. Stanley},
abstractNote = {Oxygen migration in tantalum oxide, a promising next-generation storage material, is studied using in operando x-ray absorption spectromicroscopy and is used to microphysically describe accelerated evolution of conduction channel and device failure. Furthermore, the resulting ring-like patterns of oxygen concentration are modeled using thermophoretic forces and Fick diffusion, establishing the critical role of temperature-activated oxygen migration that has been under question lately.},
doi = {10.1002/adma.201505435},
journal = {Advanced Materials},
number = 14,
volume = 28,
place = {United States},
year = {Tue Feb 02 00:00:00 EST 2016},
month = {Tue Feb 02 00:00:00 EST 2016}
}

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Cited by: 24 works
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Works referenced in this record:

Anatomy of a Nanoscale Conduction Channel Reveals the Mechanism of a High-Performance Memristor
journal, November 2011

  • Miao, Feng; Strachan, John Paul; Yang, J. Joshua
  • Advanced Materials, Vol. 23, Issue 47, p. 5633-5640
  • DOI: 10.1002/adma.201103379

Memristive devices for computing
journal, January 2013

  • Yang, J. Joshua; Strukov, Dmitri B.; Stewart, Duncan R.
  • Nature Nanotechnology, Vol. 8, Issue 1, p. 13-24
  • DOI: 10.1038/nnano.2012.240