Trapping Characteristics and Parametric Shifts in Lateral GaN HEMTs with SiO2/AlGaN Gate Stacks.

Conference · Mon Jun 01 00:00:00 EDT 2015

OSTI ID:1256280

King, Michael Patrick; Piedra, D.; Dickerson, Jeramy Ray; Dasgupta, S.; Sun, M.; Marinella, Matthew; Palacios, T.; Kaplar, Robert

Abstract not provided.

• Research Organization: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
• Sponsoring Organization: USDOE National Nuclear Security Administration (NNSA)
• DOE Contract Number: AC04-94AL85000
• OSTI ID: 1256280
• Report Number(s): SAND2015-4385C; 590470
• Resource Relation: Conference: Proposed for presentation at the IRPS 2015.
• Country of Publication: United States
• Language: English