skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Effect of Surface Passivation on Dopant Distribution in Si Quantum Dots: The Case of B and P Doping

Authors:
; ; ;
Publication Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE Office of Basic Energy Sciences
OSTI Identifier:
1256228
Report Number(s):
NREL/JA-5900-51366
Journal ID: ISSN 0003-6951
DOE Contract Number:  
AC36-08GO28308
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 98; Journal Issue: 17; Related Information: Applied Physics Letters; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 77 NANOSCIENCE AND NANOTECHNOLOGY; surface passivation; quantum dots

Citation Formats

Ma, J., Wei, S. H., Neale, N. R., and Nozik, A. J. Effect of Surface Passivation on Dopant Distribution in Si Quantum Dots: The Case of B and P Doping. United States: N. p., 2011. Web. doi:10.1063/1.3583663.
Ma, J., Wei, S. H., Neale, N. R., & Nozik, A. J. Effect of Surface Passivation on Dopant Distribution in Si Quantum Dots: The Case of B and P Doping. United States. doi:10.1063/1.3583663.
Ma, J., Wei, S. H., Neale, N. R., and Nozik, A. J. Mon . "Effect of Surface Passivation on Dopant Distribution in Si Quantum Dots: The Case of B and P Doping". United States. doi:10.1063/1.3583663.
@article{osti_1256228,
title = {Effect of Surface Passivation on Dopant Distribution in Si Quantum Dots: The Case of B and P Doping},
author = {Ma, J. and Wei, S. H. and Neale, N. R. and Nozik, A. J.},
abstractNote = {},
doi = {10.1063/1.3583663},
journal = {Applied Physics Letters},
issn = {0003-6951},
number = 17,
volume = 98,
place = {United States},
year = {2011},
month = {4}
}

Works referenced in this record:

Size Limits on Doping Phosphorus into Silicon Nanocrystals
journal, February 2008

  • Chan, T. -L.; Tiago, Murilo L.; Kaxiras, Efthimios
  • Nano Letters, Vol. 8, Issue 2
  • DOI: 10.1021/nl072997a

Structural and chemical trends in doped silicon nanocrystals: First-principles calculations
journal, June 2005

  • Zhou, Zhiyong; Steigerwald, Michael L.; Friesner, Richard A.
  • Physical Review B, Vol. 71, Issue 24
  • DOI: 10.1103/PhysRevB.71.245308

Chemical trends of defect formation in Si quantum dots: The case of group-III and group-V dopants
journal, June 2007


Theory of the oxidation of metals
journal, January 1949


First-principles study of n - and p -doped silicon nanoclusters
journal, September 2005


Semiconductor Quantum Dots and Quantum Dot Arrays and Applications of Multiple Exciton Generation to Third-Generation Photovoltaic Solar Cells
journal, November 2010

  • Nozik, A. J.; Beard, M. C.; Luther, J. M.
  • Chemical Reviews, Vol. 110, Issue 11
  • DOI: 10.1021/cr900289f

Multiple Exciton Generation in Colloidal Silicon Nanocrystals
journal, August 2007

  • Beard, Matthew C.; Knutsen, Kelly P.; Yu, Pingrong
  • Nano Letters, Vol. 7, Issue 8
  • DOI: 10.1021/nl071486l

Atomic-scale imaging of individual dopant atoms and clusters in highly n-type bulk Si
journal, April 2002

  • Voyles, P. M.; Muller, D. A.; Grazul, J. L.
  • Nature, Vol. 416, Issue 6883
  • DOI: 10.1038/416826a

Self-purification in Si nanocrystals: An energetics study
journal, September 2010


Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set
journal, October 1996


From ultrasoft pseudopotentials to the projector augmented-wave method
journal, January 1999


Theoretical Studies of Electronic State Localization and Wormholes in Silicon Quantum Dot Arrays
journal, January 2001

  • Smith, Barton B.; Nozik, A. J.
  • Nano Letters, Vol. 1, Issue 1
  • DOI: 10.1021/nl0001858

Doping efficiency, dopant location, and oxidation of Si nanocrystals
journal, March 2008

  • Pi, X. D.; Gresback, R.; Liptak, R. W.
  • Applied Physics Letters, Vol. 92, Issue 12
  • DOI: 10.1063/1.2897291

Photoluminescence and free-electron absorption in heavily phosphorus-doped Si nanocrystals
journal, November 2000


Self-Consistent Equations Including Exchange and Correlation Effects
journal, November 1965


Photoluminescence from Si nanocrystals dispersed in phosphosilicate glass thin films: Improvement of photoluminescence efficiency
journal, July 1999

  • Fujii, Minoru; Mimura, Atsushi; Hayashi, Shinji
  • Applied Physics Letters, Vol. 75, Issue 2
  • DOI: 10.1063/1.124313