Effect of Surface Passivation on Dopant Distribution in Si Quantum Dots: The Case of B and P Doping

Ma, J.; Wei, S. H.; Neale, N. R.; Nozik, A. J.

doi:10.1063/1.3583663

Title: Effect of Surface Passivation on Dopant Distribution in Si Quantum Dots: The Case of B and P Doping

Journal Article · Mon Apr 25 00:00:00 EDT 2011 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3583663· OSTI ID:1256228

Ma, J.; Wei, S. H.; Neale, N. R.; Nozik, A. J.

Cite

Export

Save

Research Organization:: National Renewable Energy Lab. (NREL), Golden, CO (United States)

Sponsoring Organization:: USDOE Office of Basic Energy Sciences

DOE Contract Number:: AC36-08GO28308

OSTI ID:: 1256228

Report Number(s):: NREL/JA-5900-51366

Journal Information:: Applied Physics Letters, Vol. 98, Issue 17; Related Information: Applied Physics Letters; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)

Country of Publication:: United States

Language:: English

References (17)

Size Limits on Doping Phosphorus into Silicon Nanocrystals Chan, T. -L.; Tiago, Murilo L.; Kaxiras, Efthimios Nano Letters, Vol. 8, Issue 2 https://doi.org/10.1021/nl072997a	journal	February 2008
Structural and chemical trends in doped silicon nanocrystals: First-principles calculations Zhou, Zhiyong; Steigerwald, Michael L.; Friesner, Richard A. Physical Review B, Vol. 71, Issue 24 https://doi.org/10.1103/PhysRevB.71.245308	journal	June 2005
Chemical trends of defect formation in Si quantum dots: The case of group-III and group-V dopants Xu, Qiang; Luo, Jun-Wei; Li, Shu-Shen Physical Review B, Vol. 75, Issue 23 https://doi.org/10.1103/PhysRevB.75.235304	journal	June 2007
Theory of the oxidation of metals Cabrera, N.; Mott, N. F. Reports on Progress in Physics, Vol. 12, Issue 1 https://doi.org/10.1088/0034-4885/12/1/308	journal	January 1949
First-principles study of $n$ - and $p$ -doped silicon nanoclusters Cantele, G.; Degoli, Elena; Luppi, Eleonora Physical Review B, Vol. 72, Issue 11 https://doi.org/10.1103/PhysRevB.72.113303	journal	September 2005
Semiconductor quantum dots and related systems: Electronic, optical, luminescence and related properties of low dimensional systems Yoffe, A. D. Advances in Physics, Vol. 50, Issue 1 https://doi.org/10.1080/00018730010006608	journal	January 2001
Semiconductor Quantum Dots and Quantum Dot Arrays and Applications of Multiple Exciton Generation to Third-Generation Photovoltaic Solar Cells Nozik, A. J.; Beard, M. C.; Luther, J. M. Chemical Reviews, Vol. 110, Issue 11 https://doi.org/10.1021/cr900289f	journal	November 2010
Multiple Exciton Generation in Colloidal Silicon Nanocrystals Beard, Matthew C.; Knutsen, Kelly P.; Yu, Pingrong Nano Letters, Vol. 7, Issue 8 https://doi.org/10.1021/nl071486l	journal	August 2007
Atomic-scale imaging of individual dopant atoms and clusters in highly n-type bulk Si Voyles, P. M.; Muller, D. A.; Grazul, J. L. Nature, Vol. 416, Issue 6883 https://doi.org/10.1038/416826a	journal	April 2002
Self-purification in Si nanocrystals: An energetics study Chan, Tzu-Liang; Kwak, Hyunwook; Eom, Jae-Hyeon Physical Review B, Vol. 82, Issue 11 https://doi.org/10.1103/PhysRevB.82.115421	journal	September 2010
Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set Kresse, G.; Furthmüller, J. Physical Review B, Vol. 54, Issue 16, p. 11169-11186 https://doi.org/10.1103/PhysRevB.54.11169	journal	October 1996
From ultrasoft pseudopotentials to the projector augmented-wave method Kresse, G.; Joubert, D. Physical Review B, Vol. 59, Issue 3, p. 1758-1775 https://doi.org/10.1103/PhysRevB.59.1758	journal	January 1999
Theoretical Studies of Electronic State Localization and Wormholes in Silicon Quantum Dot Arrays Smith, Barton B.; Nozik, A. J. Nano Letters, Vol. 1, Issue 1 https://doi.org/10.1021/nl0001858	journal	January 2001
Doping efficiency, dopant location, and oxidation of Si nanocrystals Pi, X. D.; Gresback, R.; Liptak, R. W. Applied Physics Letters, Vol. 92, Issue 12 https://doi.org/10.1063/1.2897291	journal	March 2008
Photoluminescence and free-electron absorption in heavily phosphorus-doped Si nanocrystals Mimura, Atsushi; Fujii, Minoru; Hayashi, Shinji Physical Review B, Vol. 62, Issue 19 https://doi.org/10.1103/PhysRevB.62.12625	journal	November 2000
Self-Consistent Equations Including Exchange and Correlation Effects Kohn, W.; Sham, L. J. Physical Review, Vol. 140, Issue 4A, p. A1133-A1138 https://doi.org/10.1103/PhysRev.140.A1133	journal	November 1965
Photoluminescence from Si nanocrystals dispersed in phosphosilicate glass thin films: Improvement of photoluminescence efficiency Fujii, Minoru; Mimura, Atsushi; Hayashi, Shinji Applied Physics Letters, Vol. 75, Issue 2 https://doi.org/10.1063/1.124313	journal	July 1999

Similar Records

Effects of Plasma Etching on Dopant Compensation between p- and n-Type Poly-Si Fingers in Passivated Interdigitated Back Contact Solar Cells

Conference · Fri Sep 10 00:00:00 EDT 2021 · OSTI ID:1256228

Hartenstein, Matthew B.; Harvey, Steven; Nemeth, William; +5 more

Chemical Trend of the Formation Energies of the Group-III and Group-V Dopants in Si Quantum Dots

Journal Article · Fri Mar 15 00:00:00 EDT 2013 · Physical Review. B, Condensed Matter and Materials Physics · OSTI ID:1256228

Ma, J.; Wei, S. H.

Isolating p- and n-Doped Fingers With Intrinsic Poly-Si in Passivated Interdigitated Back Contact Silicon Solar Cells

Journal Article · Thu Sep 17 00:00:00 EDT 2020 · IEEE Journal of Photovoltaics · OSTI ID:1256228

Hartenstein, Matthew B.; Nemeth, William; LaSalvia, Vincenzo; +7 more

Related Subjects

14 SOLAR ENERGY
77 NANOSCIENCE AND NANOTECHNOLOGY
surface passivation
quantum dots

Title: Effect of Surface Passivation on Dopant Distribution in Si Quantum Dots: The Case of B and P Doping

Citation Formats

References (17)

Similar Records

Related Subjects