Method for producing thin film electrodes
Patent
·
OSTI ID:1256011
The invention provides for A method for producing pure phase strontium ruthenium oxide films, the method comprising solubilizing ruthenium-containing and strontium-containing compounds to create a mixture; subjecting the mixture to a first temperature above that necessary for forming RuO.sub.2 while simultaneously preventing formation of RuO.sub.2; maintaining the first temperature for a time to remove organic compounds from the mixture, thereby forming a substantially dry film; and subjecting the film to a second temperature for time sufficient to crystallize the film. Also provided is pure phase material comprising strontium ruthenium oxide wherein the material contains no RuO.sub.2.
- Research Organization:
- Argonne National Laboratory (ANL), Argonne, IL (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC02-06CH11357;
- Assignee:
- UCHICAGO ARGONNE, LLC (Chicago, IL)
- Patent Number(s):
- 9,359,223
- Application Number:
- 13/237,487
- OSTI ID:
- 1256011
- Country of Publication:
- United States
- Language:
- English
Sol−Gel Synthesis of High-Quality SrRuO 3 Thin-Film Electrodes Suppressing the Formation of Detrimental RuO 2 and the Dielectric Properties of Integrated Lead Lanthanum Zirconate Titanate Films
|
journal | January 2011 |
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