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Title: Electronic properties of boron and nitrogen doped graphene nanoribbons and its application for graphene electronics

Authors:
Publication Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1255995
Report Number(s):
NREL/JA-5900-51214
Journal ID: ISSN 0375-9601
DOE Contract Number:  
AC36-08GO28308
Resource Type:
Journal Article
Journal Name:
Physics Letters. A
Additional Journal Information:
Journal Volume: 375; Journal Issue: 4; Related Information: Physics Letters A; Journal ID: ISSN 0375-9601
Publisher:
Elsevier
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; charge carriers; graphene nanoribbons

Citation Formats

Huang, Bing. Electronic properties of boron and nitrogen doped graphene nanoribbons and its application for graphene electronics. United States: N. p., 2011. Web. doi:10.1016/j.physleta.2010.12.050.
Huang, Bing. Electronic properties of boron and nitrogen doped graphene nanoribbons and its application for graphene electronics. United States. https://doi.org/10.1016/j.physleta.2010.12.050
Huang, Bing. Sat . "Electronic properties of boron and nitrogen doped graphene nanoribbons and its application for graphene electronics". United States. https://doi.org/10.1016/j.physleta.2010.12.050.
@article{osti_1255995,
title = {Electronic properties of boron and nitrogen doped graphene nanoribbons and its application for graphene electronics},
author = {Huang, Bing},
abstractNote = {},
doi = {10.1016/j.physleta.2010.12.050},
url = {https://www.osti.gov/biblio/1255995}, journal = {Physics Letters. A},
issn = {0375-9601},
number = 4,
volume = 375,
place = {United States},
year = {2011},
month = {1}
}