In Situ Strain Relaxation Comparison Between GaAsBi and GaInAs Grown by Molecular-Beam Epitaxy

France, R.; Jiang, C. S.; Ptak, A. J.

doi:10.1063/1.3562952

Title: In Situ Strain Relaxation Comparison Between GaAsBi and GaInAs Grown by Molecular-Beam Epitaxy

Journal Article · Mon Mar 07 00:00:00 EST 2011 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3562952· OSTI ID:1255507

France, R.; Jiang, C. S.; Ptak, A. J.

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Research Organization:: National Renewable Energy Lab. (NREL), Golden, CO (United States)

Sponsoring Organization:: USDOE

DOE Contract Number:: AC36-08GO28308

OSTI ID:: 1255507

Report Number(s):: NREL/JA-5200-50869

Journal Information:: Applied Physics Letters, Vol. 98, Issue 10; Related Information: Applied Physics Letters; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)

Country of Publication:: United States

Language:: English

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