skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Effective gating and tunable magnetic proximity effects in two-dimensional heterostructures

Authors:
; ;
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1255353
Grant/Contract Number:  
SC0004890
Resource Type:
Journal Article: Publisher's Accepted Manuscript
Journal Name:
Physical Review B
Additional Journal Information:
Journal Name: Physical Review B Journal Volume: 93 Journal Issue: 24; Journal ID: ISSN 2469-9950
Publisher:
American Physical Society
Country of Publication:
United States
Language:
English

Citation Formats

Lazić, Predrag, Belashchenko, K. D., and Žutić, Igor. Effective gating and tunable magnetic proximity effects in two-dimensional heterostructures. United States: N. p., 2016. Web. doi:10.1103/PhysRevB.93.241401.
Lazić, Predrag, Belashchenko, K. D., & Žutić, Igor. Effective gating and tunable magnetic proximity effects in two-dimensional heterostructures. United States. doi:10.1103/PhysRevB.93.241401.
Lazić, Predrag, Belashchenko, K. D., and Žutić, Igor. Thu . "Effective gating and tunable magnetic proximity effects in two-dimensional heterostructures". United States. doi:10.1103/PhysRevB.93.241401.
@article{osti_1255353,
title = {Effective gating and tunable magnetic proximity effects in two-dimensional heterostructures},
author = {Lazić, Predrag and Belashchenko, K. D. and Žutić, Igor},
abstractNote = {},
doi = {10.1103/PhysRevB.93.241401},
journal = {Physical Review B},
number = 24,
volume = 93,
place = {United States},
year = {Thu Jun 02 00:00:00 EDT 2016},
month = {Thu Jun 02 00:00:00 EDT 2016}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record at 10.1103/PhysRevB.93.241401

Citation Metrics:
Cited by: 15 works
Citation information provided by
Web of Science

Save / Share:

Works referenced in this record:

Generalized Gradient Approximation Made Simple
journal, October 1996

  • Perdew, John P.; Burke, Kieron; Ernzerhof, Matthias
  • Physical Review Letters, Vol. 77, Issue 18, p. 3865-3868
  • DOI: 10.1103/PhysRevLett.77.3865

Atomically Thin MoS2 A New Direct-Gap Semiconductor
journal, September 2010


Boron nitride substrates for high-quality graphene electronics
journal, August 2010

  • Dean, C. R.; Young, A. F.; Meric, I.
  • Nature Nanotechnology, Vol. 5, Issue 10, p. 722-726
  • DOI: 10.1038/nnano.2010.172

Van der Waals heterostructures
journal, July 2013

  • Geim, A. K.; Grigorieva, I. V.
  • Nature, Vol. 499, Issue 7459, p. 419-425
  • DOI: 10.1038/nature12385

Colloquium: Topological insulators
journal, November 2010


Electrostatic modification of novel materials
journal, November 2006

  • Ahn, C. H.; Bhattacharya, A.; Di Ventra, M.
  • Reviews of Modern Physics, Vol. 78, Issue 4, p. 1185-1212
  • DOI: 10.1103/RevModPhys.78.1185

Single-layer MoS2 transistors
journal, January 2011

  • Radisavljevic, B.; Radenovic, A.; Brivio, J.
  • Nature Nanotechnology, Vol. 6, Issue 3, p. 147-150
  • DOI: 10.1038/nnano.2010.279

Electronic spin transport and spin precession in single graphene layers at room temperature
journal, July 2007

  • Tombros, Nikolaos; Jozsa, Csaba; Popinciuc, Mihaita
  • Nature, Vol. 448, Issue 7153, p. 571-574
  • DOI: 10.1038/nature06037