Thin film bismuth iron oxides useful for piezoelectric devices

Zeches, Robert J.; Martin, Lane W.; Ramesh, Ramamoorthy

Thin film bismuth iron oxides useful for piezoelectric devices

Patent · 31 May 2016

OSTI ID:1255124

Zeches, Robert J.; Martin, Lane W.; Ramesh, Ramamoorthy

The present invention provides for a composition comprising a thin film of BiFeO.sub.3 having a thickness ranging from 20 nm to 300 nm, a first electrode in contact with the BiFeO.sub.3 thin film, and a second electrode in contact with the BiFeO.sub.3 thin film; wherein the first and second electrodes are in electrical communication. The composition is free or essentially free of lead (Pb). The BFO thin film is has the piezoelectric property of changing its volume and/or shape when an electric field is applied to the BFO thin film.

Research Organization:: Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)

Sponsoring Organization:: USDOE

DOE Contract Number:: AC02-05CH11231

Assignee:: The Regents of the University of California (Oakland, CA)

Patent Number(s):: 9,356,224

Application Number:: 12/916,209

OSTI ID:: 1255124

Country of Publication:: United States

Language:: English

References (12)

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