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Title: Method for fabrication of crack-free ceramic dielectric films

Abstract

The invention provides a process for forming crack-free dielectric films on a substrate. The process comprises the application of a dielectric precursor layer of a thickness from about 0.3 .mu.m to about 1.0 .mu.m to a substrate. The deposition is followed by low temperature heat pretreatment, prepyrolysis, pyrolysis and crystallization step for each layer. The deposition, heat pretreatment, prepyrolysis, pyrolysis and crystallization are repeated until the dielectric film forms an overall thickness of from about 1.5 .mu.m to about 20.0 .mu.m and providing a final crystallization treatment to form a thick dielectric film. The process provides a thick crack-free dielectric film on a substrate, the dielectric forming a dense thick crack-free dielectric having an overall dielectric thickness of from about 1.5 .mu.m to about 20.0 .mu.m.

Inventors:
; ; ; ;
Publication Date:
Research Org.:
Argonne National Lab. (ANL), Argonne, IL (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1254850
Patent Number(s):
9,355,761
Application Number:
13/250,926
Assignee:
UCHICAGO ARGONNE, LLC (Chicago, IL) ANL
DOE Contract Number:  
AC02-06CH11357
Resource Type:
Patent
Resource Relation:
Patent File Date: 2014 Jan 02
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Ma, Beihai, Narayanan, Manoj, Balachandran, Uthamalingam, Chao, Sheng, and Liu, Shanshan. Method for fabrication of crack-free ceramic dielectric films. United States: N. p., 2016. Web.
Ma, Beihai, Narayanan, Manoj, Balachandran, Uthamalingam, Chao, Sheng, & Liu, Shanshan. Method for fabrication of crack-free ceramic dielectric films. United States.
Ma, Beihai, Narayanan, Manoj, Balachandran, Uthamalingam, Chao, Sheng, and Liu, Shanshan. Tue . "Method for fabrication of crack-free ceramic dielectric films". United States. https://www.osti.gov/servlets/purl/1254850.
@article{osti_1254850,
title = {Method for fabrication of crack-free ceramic dielectric films},
author = {Ma, Beihai and Narayanan, Manoj and Balachandran, Uthamalingam and Chao, Sheng and Liu, Shanshan},
abstractNote = {The invention provides a process for forming crack-free dielectric films on a substrate. The process comprises the application of a dielectric precursor layer of a thickness from about 0.3 .mu.m to about 1.0 .mu.m to a substrate. The deposition is followed by low temperature heat pretreatment, prepyrolysis, pyrolysis and crystallization step for each layer. The deposition, heat pretreatment, prepyrolysis, pyrolysis and crystallization are repeated until the dielectric film forms an overall thickness of from about 1.5 .mu.m to about 20.0 .mu.m and providing a final crystallization treatment to form a thick dielectric film. The process provides a thick crack-free dielectric film on a substrate, the dielectric forming a dense thick crack-free dielectric having an overall dielectric thickness of from about 1.5 .mu.m to about 20.0 .mu.m.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2016},
month = {5}
}

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Works referenced in this record:

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