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Title: DFT Calculations of Activation Energies for Carrier Capture by Defects in Semiconductors.

Abstract

Abstract not provided.

Authors:
; ;
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1254692
Report Number(s):
SAND2015-3792C
584040
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Conference
Resource Relation:
Conference: Proposed for presentation at the American Physical Society March Meeting 2015 held March 2 - February 6, 2015 in San Antonio, TX.
Country of Publication:
United States
Language:
English

Citation Formats

Modine, Normand A., Wright, Alan F., and Lee, Stephen R. DFT Calculations of Activation Energies for Carrier Capture by Defects in Semiconductors.. United States: N. p., 2015. Web.
Modine, Normand A., Wright, Alan F., & Lee, Stephen R. DFT Calculations of Activation Energies for Carrier Capture by Defects in Semiconductors.. United States.
Modine, Normand A., Wright, Alan F., and Lee, Stephen R. Fri . "DFT Calculations of Activation Energies for Carrier Capture by Defects in Semiconductors.". United States. https://www.osti.gov/servlets/purl/1254692.
@article{osti_1254692,
title = {DFT Calculations of Activation Energies for Carrier Capture by Defects in Semiconductors.},
author = {Modine, Normand A. and Wright, Alan F. and Lee, Stephen R.},
abstractNote = {Abstract not provided.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2015},
month = {5}
}

Conference:
Other availability
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