DFT Calculations of Activation Energies for Carrier Capture by Defects in Semiconductors.
Conference
·
OSTI ID:1254692
Abstract not provided.
- Research Organization:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE National Nuclear Security Administration (NNSA)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 1254692
- Report Number(s):
- SAND2015-3792C; 584040
- Resource Relation:
- Conference: Proposed for presentation at the American Physical Society March Meeting 2015 held March 2 - February 6, 2015 in San Antonio, TX.
- Country of Publication:
- United States
- Language:
- English
Similar Records
DFT Calculations of Activation Energies for Carrier Capture by Defects in Semiconductors.
Density Functional Theory Calculations for Carrier Capture by Defects in Semiconductors.
Density Functional Theory Calculations of Activation Energies for Non-radiative Carrier Capture by Deep Defect Levels in Semiconductors.
Conference
·
Mon Jun 01 00:00:00 EDT 2015
·
OSTI ID:1254692
Density Functional Theory Calculations for Carrier Capture by Defects in Semiconductors.
Conference
·
Fri Apr 01 00:00:00 EDT 2016
·
OSTI ID:1254692
+1 more
Density Functional Theory Calculations of Activation Energies for Non-radiative Carrier Capture by Deep Defect Levels in Semiconductors.
Journal Article
·
Mon Sep 01 00:00:00 EDT 2014
· Sandia journal manuscript; Not yet accepted for publication
·
OSTI ID:1254692