Band Crossing in Isovalent Semiconductor Alloys with Large Size Mismatch: First-Principles Calculations of the Electronic Structure of Bi and N Incorporated GaAs

Deng, H. X.; Li, J. B.; Li, S. S.; Peng, H. W.; Xia, J. B.; Wang, L. W.; Wei, S. H.

doi:10.1103/PhysRevB.82.193204

Title: Band Crossing in Isovalent Semiconductor Alloys with Large Size Mismatch: First-Principles Calculations of the Electronic Structure of Bi and N Incorporated GaAs

Journal Article · Fri Jan 01 00:00:00 EST 2010 · Physical Review B

DOI:https://doi.org/10.1103/PhysRevB.82.193204· OSTI ID:1254621

Deng, H. X.; Li, J. B.; Li, S. S.; Peng, H. W.; Xia, J. B.; Wang, L. W.; Wei, S. H.

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Research Organization:: National Renewable Energy Lab. (NREL), Golden, CO (United States)

Sponsoring Organization:: USDOE

DOE Contract Number:: AC36-08GO28308

OSTI ID:: 1254621

Report Number(s):: NREL/JA-5900-50253

Journal Information:: Physical Review B, Vol. 82, Issue 19; Related Information: Physical Review. B, Condensed Matter and Materials Physics; ISSN 2469-9950

Publisher:: American Physical Society (APS)

Country of Publication:: United States

Language:: English

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Title: Band Crossing in Isovalent Semiconductor Alloys with Large Size Mismatch: First-Principles Calculations of the Electronic Structure of Bi and N Incorporated GaAs

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