skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Ferroelastic switching in a layered-perovskite thin film

Abstract

Here, a controllable ferroelastic switching in ferroelectric/multiferroic oxides is highly desirable due to the non-volatile strain and possible coupling between lattice and other order parameter in heterostructures. However, a substrate clamping usually inhibits their elastic deformation in thin films without micro/nano-patterned structure so that the integration of the non-volatile strain with thin film devices is challenging. Here, we report that reversible in-plane elastic switching with a non-volatile strain of approximately 0.4% can be achieved in layered-perovskite Bi 2WO 6 thin films, where the ferroelectric polarization rotates by 90° within four in-plane preferred orientations. Phase-field simulation indicates that the energy barrier of ferroelastic switching in orthorhombic Bi 2WO 6 film is ten times lower than the one in PbTiO 3 films, revealing the origin of the switching with negligible substrate constraint. The reversible control of the in-plane strain in this layered-perovskite thin film demonstrates a new pathway to integrate mechanical deformation with nanoscale electronic and/or magnetoelectronic applications.

Authors:
 [1];  [2];  [3];  [3];  [4];  [1];  [5];  [6];  [1];  [6];  [7];  [8];  [3];  [5];  [1]
  1. Beijing Normal Univ., Beijing (China)
  2. Univ. of Antwerp, Antwerp (Belgium); Beijing Univ. of Technology, Beijing (China)
  3. Tsinghua Univ., Beijing (China)
  4. Univ. of Science and Technology of China, Hefei (China)
  5. Univ. of California, Berkeley, CA (United States)
  6. Chinese Academy of Science, Beijing (China)
  7. Univ. of Antwerp, Antwerp (Belgium)
  8. Tsinghua Univ., Beijing (China); The Pennsylvania State Univ., University Park, PA (United States)
Publication Date:
Research Org.:
Pennsylvania State Univ., University Park, PA (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
OSTI Identifier:
1253567
Grant/Contract Number:  
FG02-07ER46417
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
Nature Communications
Additional Journal Information:
Journal Volume: 7; Journal ID: ISSN 2041-1723
Publisher:
Nature Publishing Group
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; physical sciences; materials science; nanotechnology; condensed matter

Citation Formats

Wang, Chuanshou, Ke, Xiaoxing, Wang, Jianjun, Liang, Renrong, Luo, Zhenlin, Tian, Yu, Yi, Di, Zhang, Qintong, Wang, Jing, Han, Xiu -Feng, Van Tendeloo, Gustaaf, Chen, Long -Qing, Nan, Ce -Wen, Ramesh, Ramamoorthy, and Zhang, Jinxing. Ferroelastic switching in a layered-perovskite thin film. United States: N. p., 2016. Web. doi:10.1038/ncomms10636.
Wang, Chuanshou, Ke, Xiaoxing, Wang, Jianjun, Liang, Renrong, Luo, Zhenlin, Tian, Yu, Yi, Di, Zhang, Qintong, Wang, Jing, Han, Xiu -Feng, Van Tendeloo, Gustaaf, Chen, Long -Qing, Nan, Ce -Wen, Ramesh, Ramamoorthy, & Zhang, Jinxing. Ferroelastic switching in a layered-perovskite thin film. United States. doi:10.1038/ncomms10636.
Wang, Chuanshou, Ke, Xiaoxing, Wang, Jianjun, Liang, Renrong, Luo, Zhenlin, Tian, Yu, Yi, Di, Zhang, Qintong, Wang, Jing, Han, Xiu -Feng, Van Tendeloo, Gustaaf, Chen, Long -Qing, Nan, Ce -Wen, Ramesh, Ramamoorthy, and Zhang, Jinxing. Wed . "Ferroelastic switching in a layered-perovskite thin film". United States. doi:10.1038/ncomms10636. https://www.osti.gov/servlets/purl/1253567.
@article{osti_1253567,
title = {Ferroelastic switching in a layered-perovskite thin film},
author = {Wang, Chuanshou and Ke, Xiaoxing and Wang, Jianjun and Liang, Renrong and Luo, Zhenlin and Tian, Yu and Yi, Di and Zhang, Qintong and Wang, Jing and Han, Xiu -Feng and Van Tendeloo, Gustaaf and Chen, Long -Qing and Nan, Ce -Wen and Ramesh, Ramamoorthy and Zhang, Jinxing},
abstractNote = {Here, a controllable ferroelastic switching in ferroelectric/multiferroic oxides is highly desirable due to the non-volatile strain and possible coupling between lattice and other order parameter in heterostructures. However, a substrate clamping usually inhibits their elastic deformation in thin films without micro/nano-patterned structure so that the integration of the non-volatile strain with thin film devices is challenging. Here, we report that reversible in-plane elastic switching with a non-volatile strain of approximately 0.4% can be achieved in layered-perovskite Bi2WO6 thin films, where the ferroelectric polarization rotates by 90° within four in-plane preferred orientations. Phase-field simulation indicates that the energy barrier of ferroelastic switching in orthorhombic Bi2WO6 film is ten times lower than the one in PbTiO3 films, revealing the origin of the switching with negligible substrate constraint. The reversible control of the in-plane strain in this layered-perovskite thin film demonstrates a new pathway to integrate mechanical deformation with nanoscale electronic and/or magnetoelectronic applications.},
doi = {10.1038/ncomms10636},
journal = {Nature Communications},
issn = {2041-1723},
number = ,
volume = 7,
place = {United States},
year = {2016},
month = {2}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record

Citation Metrics:
Cited by: 12 works
Citation information provided by
Web of Science

Save / Share:

Works referenced in this record:

First-principles determination of ferroelectric instabilities in Aurivillius compounds
journal, December 2004


Controlled crystal growth of layered-perovskite thin films as an approach to study their basic properties
journal, September 2006

  • Watanabe, Takayuki; Funakubo, Hiroshi
  • Journal of Applied Physics, Vol. 100, Issue 5
  • DOI: 10.1063/1.2337357

Applications of Modern Ferroelectrics
journal, February 2007


Ferroelectric, dielectric and piezoelectric properties of ferroelectric thin films and ceramics
journal, September 1998


Orthorhombic BiFeO 3
journal, December 2012


Domain formation in epitaxial Pb(Zr, Ti)O3 thin films
journal, October 2001

  • Lee, K. S.; Choi, J. H.; Lee, J. Y.
  • Journal of Applied Physics, Vol. 90, Issue 8
  • DOI: 10.1063/1.1404424

Thickness dependence of structural and electrical properties in epitaxial lead zirconate titanate films
journal, July 1999

  • Nagarajan, V.; Jenkins, I. G.; Alpay, S. P.
  • Journal of Applied Physics, Vol. 86, Issue 1
  • DOI: 10.1063/1.370772

Coercive field of ultrathin Pb(Zr0.52Ti0.48)O3 epitaxial films
journal, October 2003

  • Pertsev, N. A.; Rodrı́guez Contreras, J.; Kukhar, V. G.
  • Applied Physics Letters, Vol. 83, Issue 16
  • DOI: 10.1063/1.1621731

Multiferroic BaTiO3-CoFe2O4 Nanostructures
journal, January 2004


Exploring Vertex Interactions in Ferroelectric Flux-Closure Domains
journal, July 2014

  • McQuaid, Raymond G. P.; Gruverman, Alexei; Scott, James F.
  • Nano Letters, Vol. 14, Issue 8
  • DOI: 10.1021/nl5006788

Super switching and control of in-plane ferroelectric nanodomains in strained thin films
journal, July 2014

  • Matzen, S.; Nesterov, O.; Rispens, G.
  • Nature Communications, Vol. 5, Issue 1
  • DOI: 10.1038/ncomms5415

Strain Control of Domain-Wall Stability in Epitaxial BiFeO 3 (110) Films
journal, November 2007


Strain relaxation by domain formation in epitaxial ferroelectric thin films
journal, June 1992


Lanthanum-substituted bismuth titanate for use in non-volatile memories
journal, October 1999

  • Park, B. H.; Kang, B. S.; Bu, S. D.
  • Nature, Vol. 401, Issue 6754
  • DOI: 10.1038/44352

Ultrahigh strain and piezoelectric behavior in relaxor based ferroelectric single crystals
journal, August 1997

  • Park, Seung-Eek; Shrout, Thomas R.
  • Journal of Applied Physics, Vol. 82, Issue 4
  • DOI: 10.1063/1.365983

Giant Piezoelectricity on Si for Hyperactive MEMS
journal, November 2011


Oxygen-vacancy-induced 90 ° -domain clamping in ferroelectric Bi 4 Ti 3 O 12 single crystals
journal, March 2010


Size Dependence of Domain Pattern Transfer in Multiferroic Heterostructures
journal, January 2014

  • Franke, Kévin J. A.; López González, Diego; Hämäläinen, Sampo J.
  • Physical Review Letters, Vol. 112, Issue 1
  • DOI: 10.1103/PhysRevLett.112.017201

Microstructure and dielectric properties of epitaxial Bi2WO6 deposited by pulsed laser ablation
journal, August 1997


Non-Volatile 180° Magnetization Reversal by an Electric Field in Multiferroic Heterostructures
journal, September 2014


Origin of 90° domain wall pinning in Pb(Zr 0.2 Ti 0.8 )O 3 heteroepitaxial thin films
journal, September 2011

  • Su, Dong; Meng, Qingping; Vaz, C. A. F.
  • Applied Physics Letters, Vol. 99, Issue 10
  • DOI: 10.1063/1.3634028

Exploring Topological Defects in Epitaxial BiFeO 3 Thin Films
journal, January 2011

  • Vasudevan, Rama K.; Chen, Yi-Chun; Tai, Hsiang-Hua
  • ACS Nano, Vol. 5, Issue 2
  • DOI: 10.1021/nn102099z

High-density magnetoresistive random access memory operating at ultralow voltage at room temperature
journal, September 2011

  • Hu, Jia-Mian; Li, Zheng; Chen, Long-Qing
  • Nature Communications, Vol. 2, Issue 1
  • DOI: 10.1038/ncomms1564

Enhanced electric conductivity at ferroelectric vortex cores in BiFeO3
journal, November 2011

  • Balke, Nina; Winchester, Benjamin; Ren, Wei
  • Nature Physics, Vol. 8, Issue 1
  • DOI: 10.1038/nphys2132

Domain Dynamics During Ferroelectric Switching
journal, November 2011


Experimental demonstration of hybrid improper ferroelectricity and the presence of abundant charged walls in (Ca,Sr)3Ti2O7 crystals
journal, January 2015

  • Oh, Yoon Seok; Luo, Xuan; Huang, Fei-Ting
  • Nature Materials, Vol. 14, Issue 4
  • DOI: 10.1038/nmat4168

A desirable wind up
journal, July 2008


Effect of Mechanical Boundary Conditions on Phase Diagrams of Epitaxial Ferroelectric Thin Films
journal, March 1998


Crystal structure and ferroelectric properties of A Bi 2 Ta 2 O 9 ( A = Ca , Sr, and Ba)
journal, March 2000


Ferroelastic switching for nanoscale non-volatile magnetoelectric devices
journal, February 2010

  • Baek, S. H.; Jang, H. W.; Folkman, C. M.
  • Nature Materials, Vol. 9, Issue 4
  • DOI: 10.1038/nmat2703

Measurement of piezoelectric coefficients of ferroelectric thin films
journal, August 1994

  • Lefki, K.; Dormans, G. J. M.
  • Journal of Applied Physics, Vol. 76, Issue 3
  • DOI: 10.1063/1.357693

Experimental investigation into the effect of substrate clamping on the piezoelectric behaviour of thick-film PZT elements
journal, March 2004

  • Torah, R. N.; Beeby, S. P.; White, N. M.
  • Journal of Physics D: Applied Physics, Vol. 37, Issue 7
  • DOI: 10.1088/0022-3727/37/7/019

Layered Perovskites with Giant Spontaneous Polarizations for Nonvolatile Memories
journal, August 2002


Ferroelectric thin films: Review of materials, properties, and applications
journal, September 2006

  • Setter, N.; Damjanovic, D.; Eng, L.
  • Journal of Applied Physics, Vol. 100, Issue 5
  • DOI: 10.1063/1.2336999

Giant sharp and persistent converse magnetoelectric effects in multiferroic epitaxial heterostructures
journal, April 2007

  • Eerenstein, W.; Wiora, M.; Prieto, J. L.
  • Nature Materials, Vol. 6, Issue 5
  • DOI: 10.1038/nmat1886

Physics of thin-film ferroelectric oxides
journal, October 2005


Multiferroics progress and prospects in thin films
journal, January 2007

  • Ramesh, R.; Spaldin, Nicola A.
  • Nature Materials, Vol. 6, Issue 1, p. 21-29
  • DOI: 10.1038/nmat1805

Deterministic switching of ferromagnetism at room temperature using an electric field
journal, December 2014


Large resistivity modulation in mixed-phase metallic systems
journal, January 2015

  • Lee, Yeonbae; Liu, Z. Q.; Heron, J. T.
  • Nature Communications, Vol. 6, Issue 1
  • DOI: 10.1038/ncomms6959

Deterministic control of ferroelastic switching in multiferroic materials
journal, October 2009

  • Balke, N.; Choudhury, S.; Jesse, S.
  • Nature Nanotechnology, Vol. 4, Issue 12, p. 868-875
  • DOI: 10.1038/nnano.2009.293

Fatigue-free ferroelectric capacitors with platinum electrodes
journal, April 1995

  • de Araujo, C. A-Paz; Cuchiaro, J. D.; McMillan, L. D.
  • Nature, Vol. 374, Issue 6523
  • DOI: 10.1038/374627a0

Dynamics of ferroelastic domains in ferroelectric thin films
journal, December 2002

  • Nagarajan, V.; Roytburd, A.; Stanishevsky, A.
  • Nature Materials, Vol. 2, Issue 1
  • DOI: 10.1038/nmat800

First-principles study of the ferroelectric Aurivillius phase Bi 2 WO 6
journal, August 2012


Multiferroic and magnetoelectric materials
journal, August 2006

  • Eerenstein, W.; Mathur, N. D.; Scott, J. F.
  • Nature, Vol. 442, Issue 7104
  • DOI: 10.1038/nature05023

Strain Tuning of Ferroelectric Thin Films
journal, August 2007


First-Principles Characterization of the P 2 1 ab Ferroelectric Phase of Aurivillius Bi 2 WO 6
journal, June 2014

  • Djani, Hania; Hermet, Patrick; Ghosez, Philippe
  • The Journal of Physical Chemistry C, Vol. 118, Issue 25
  • DOI: 10.1021/jp504674k

Ferroelastic domain switching dynamics under electrical and mechanical excitations
journal, May 2014

  • Gao, Peng; Britson, Jason; Nelson, Christopher T.
  • Nature Communications, Vol. 5, Issue 1
  • DOI: 10.1038/ncomms4801

A nanoscale shape memory oxide
journal, November 2013

  • Zhang, Jinxing; Ke, Xiaoxing; Gou, Gaoyang
  • Nature Communications, Vol. 4, Issue 1
  • DOI: 10.1038/ncomms3768

Ferroelectric polarization reversal via successive ferroelastic transitions
journal, October 2014

  • Xu, Ruijuan; Liu, Shi; Grinberg, Ilya
  • Nature Materials, Vol. 14, Issue 1
  • DOI: 10.1038/nmat4119

    Works referencing / citing this record:

    Controllability of coercive stress in organoferroelasticity by the incorporation of a bulky flipping moiety in molecular crystals
    journal, January 2018

    • Mir, Sajjad Husain; Takasaki, Yuichi; Engel, Emile R.
    • CrystEngComm, Vol. 20, Issue 27
    • DOI: 10.1039/c8ce00295a

    Ferroelasticity in an Organic Crystal: A Macroscopic and Molecular Level Study
    journal, November 2017

    • Mir, Sajjad Husain; Takasaki, Yuichi; Engel, Emile Richard
    • Angewandte Chemie International Edition, Vol. 56, Issue 50
    • DOI: 10.1002/anie.201707749

    Quinuclidinium salt ferroelectric thin-film with duodecuple-rotational polarization-directions
    journal, April 2017

    • You, Yu-Meng; Tang, Yuan-Yuan; Li, Peng-Fei
    • Nature Communications, Vol. 8, Issue 1
    • DOI: 10.1038/ncomms14934

    A high-temperature molecular ferroelastic phase transition and switchable dielectric response in the trimethylbromomethylammonium salt [C 4 H 11 NBr] [PF 6 ]
    journal, January 2018

    • Chen, Xiao-Gang; Gao, Ji-Xing; Hua, Xiu-Ni
    • New Journal of Chemistry, Vol. 42, Issue 18
    • DOI: 10.1039/c8nj02645a

    Ferroelasticity in an Organic Crystal: A Macroscopic and Molecular Level Study
    journal, November 2017

    • Mir, Sajjad Husain; Takasaki, Yuichi; Engel, Emile Richard
    • Angewandte Chemie, Vol. 129, Issue 50
    • DOI: 10.1002/ange.201707749

    Photoluminescent Ferroelastic Molecular Crystals
    journal, March 2020

    • Seki, Tomohiro; Feng, Chi; Kashiyama, Kentaro
    • Angewandte Chemie International Edition
    • DOI: 10.1002/anie.201914610

    Quinuclidinium salt ferroelectric thin-film with duodecuple-rotational polarization-directions
    journal, April 2017

    • You, Yu-Meng; Tang, Yuan-Yuan; Li, Peng-Fei
    • Nature Communications, Vol. 8, Issue 1
    • DOI: 10.1038/ncomms14934

    Controllability of coercive stress in organoferroelasticity by the incorporation of a bulky flipping moiety in molecular crystals
    journal, January 2018

    • Mir, Sajjad Husain; Takasaki, Yuichi; Engel, Emile R.
    • CrystEngComm, Vol. 20, Issue 27
    • DOI: 10.1039/c8ce00295a

    A high-temperature molecular ferroelastic phase transition and switchable dielectric response in the trimethylbromomethylammonium salt [C 4 H 11 NBr] [PF 6 ]
    journal, January 2018

    • Chen, Xiao-Gang; Gao, Ji-Xing; Hua, Xiu-Ni
    • New Journal of Chemistry, Vol. 42, Issue 18
    • DOI: 10.1039/c8nj02645a

    Switching the chirality of a magnetic vortex deterministically with an electric field
    journal, October 2018