skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Ferroelastic switching in a layered-perovskite thin film

Abstract

Here, a controllable ferroelastic switching in ferroelectric/multiferroic oxides is highly desirable due to the non-volatile strain and possible coupling between lattice and other order parameter in heterostructures. However, a substrate clamping usually inhibits their elastic deformation in thin films without micro/nano-patterned structure so that the integration of the non-volatile strain with thin film devices is challenging. Here, we report that reversible in-plane elastic switching with a non-volatile strain of approximately 0.4% can be achieved in layered-perovskite Bi 2WO 6 thin films, where the ferroelectric polarization rotates by 90° within four in-plane preferred orientations. Phase-field simulation indicates that the energy barrier of ferroelastic switching in orthorhombic Bi 2WO 6 film is ten times lower than the one in PbTiO 3 films, revealing the origin of the switching with negligible substrate constraint. The reversible control of the in-plane strain in this layered-perovskite thin film demonstrates a new pathway to integrate mechanical deformation with nanoscale electronic and/or magnetoelectronic applications.

Authors:
 [1];  [2];  [3];  [3];  [4];  [1];  [5];  [6];  [1];  [6];  [7];  [8];  [3];  [5];  [1]
  1. Beijing Normal Univ., Beijing (China)
  2. Univ. of Antwerp, Antwerp (Belgium); Beijing Univ. of Technology, Beijing (China)
  3. Tsinghua Univ., Beijing (China)
  4. Univ. of Science and Technology of China, Hefei (China)
  5. Univ. of California, Berkeley, CA (United States)
  6. Chinese Academy of Science, Beijing (China)
  7. Univ. of Antwerp, Antwerp (Belgium)
  8. Tsinghua Univ., Beijing (China); The Pennsylvania State Univ., University Park, PA (United States)
Publication Date:
Research Org.:
Pennsylvania State Univ., University Park, PA (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1253567
Grant/Contract Number:  
FG02-07ER46417
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
Nature Communications
Additional Journal Information:
Journal Volume: 7; Journal ID: ISSN 2041-1723
Publisher:
Nature Publishing Group
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; physical sciences; materials science; nanotechnology; condensed matter

Citation Formats

Wang, Chuanshou, Ke, Xiaoxing, Wang, Jianjun, Liang, Renrong, Luo, Zhenlin, Tian, Yu, Yi, Di, Zhang, Qintong, Wang, Jing, Han, Xiu -Feng, Van Tendeloo, Gustaaf, Chen, Long -Qing, Nan, Ce -Wen, Ramesh, Ramamoorthy, and Zhang, Jinxing. Ferroelastic switching in a layered-perovskite thin film. United States: N. p., 2016. Web. doi:10.1038/ncomms10636.
Wang, Chuanshou, Ke, Xiaoxing, Wang, Jianjun, Liang, Renrong, Luo, Zhenlin, Tian, Yu, Yi, Di, Zhang, Qintong, Wang, Jing, Han, Xiu -Feng, Van Tendeloo, Gustaaf, Chen, Long -Qing, Nan, Ce -Wen, Ramesh, Ramamoorthy, & Zhang, Jinxing. Ferroelastic switching in a layered-perovskite thin film. United States. doi:10.1038/ncomms10636.
Wang, Chuanshou, Ke, Xiaoxing, Wang, Jianjun, Liang, Renrong, Luo, Zhenlin, Tian, Yu, Yi, Di, Zhang, Qintong, Wang, Jing, Han, Xiu -Feng, Van Tendeloo, Gustaaf, Chen, Long -Qing, Nan, Ce -Wen, Ramesh, Ramamoorthy, and Zhang, Jinxing. Wed . "Ferroelastic switching in a layered-perovskite thin film". United States. doi:10.1038/ncomms10636. https://www.osti.gov/servlets/purl/1253567.
@article{osti_1253567,
title = {Ferroelastic switching in a layered-perovskite thin film},
author = {Wang, Chuanshou and Ke, Xiaoxing and Wang, Jianjun and Liang, Renrong and Luo, Zhenlin and Tian, Yu and Yi, Di and Zhang, Qintong and Wang, Jing and Han, Xiu -Feng and Van Tendeloo, Gustaaf and Chen, Long -Qing and Nan, Ce -Wen and Ramesh, Ramamoorthy and Zhang, Jinxing},
abstractNote = {Here, a controllable ferroelastic switching in ferroelectric/multiferroic oxides is highly desirable due to the non-volatile strain and possible coupling between lattice and other order parameter in heterostructures. However, a substrate clamping usually inhibits their elastic deformation in thin films without micro/nano-patterned structure so that the integration of the non-volatile strain with thin film devices is challenging. Here, we report that reversible in-plane elastic switching with a non-volatile strain of approximately 0.4% can be achieved in layered-perovskite Bi2WO6 thin films, where the ferroelectric polarization rotates by 90° within four in-plane preferred orientations. Phase-field simulation indicates that the energy barrier of ferroelastic switching in orthorhombic Bi2WO6 film is ten times lower than the one in PbTiO3 films, revealing the origin of the switching with negligible substrate constraint. The reversible control of the in-plane strain in this layered-perovskite thin film demonstrates a new pathway to integrate mechanical deformation with nanoscale electronic and/or magnetoelectronic applications.},
doi = {10.1038/ncomms10636},
journal = {Nature Communications},
number = ,
volume = 7,
place = {United States},
year = {Wed Feb 03 00:00:00 EST 2016},
month = {Wed Feb 03 00:00:00 EST 2016}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record

Citation Metrics:
Cited by: 12 works
Citation information provided by
Web of Science

Save / Share:

Works referenced in this record:

Multiferroics progress and prospects in thin films
journal, January 2007

  • Ramesh, R.; Spaldin, Nicola A.
  • Nature Materials, Vol. 6, Issue 1, p. 21-29
  • DOI: 10.1038/nmat1805

Deterministic control of ferroelastic switching in multiferroic materials
journal, October 2009

  • Balke, N.; Choudhury, S.; Jesse, S.
  • Nature Nanotechnology, Vol. 4, Issue 12, p. 868-875
  • DOI: 10.1038/nnano.2009.293