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Title: Chapter 13: Overcoming Bipolar Doping Difficulty in Wide Gap Semiconductors

Authors:
;
Publication Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE Office of Energy Efficiency and Renewable Energy (EERE)
OSTI Identifier:
1253453
Report Number(s):
NREL/CH-5900-49606
DOE Contract Number:  
AC36-08GO28308
Resource Type:
Book
Resource Relation:
Related Information: Advanced Calculations for Defects in Materials: Electronic Structure Methods
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 77 NANOSCIENCE AND NANOTECHNOLOGY; solar; semiconductors; wide gap; doping

Citation Formats

Wei, S. H., and Yan, Y. Chapter 13: Overcoming Bipolar Doping Difficulty in Wide Gap Semiconductors. United States: N. p., 2011. Web. doi:10.1002/9783527638529.ch13.
Wei, S. H., & Yan, Y. Chapter 13: Overcoming Bipolar Doping Difficulty in Wide Gap Semiconductors. United States. doi:10.1002/9783527638529.ch13.
Wei, S. H., and Yan, Y. Sat . "Chapter 13: Overcoming Bipolar Doping Difficulty in Wide Gap Semiconductors". United States. doi:10.1002/9783527638529.ch13.
@article{osti_1253453,
title = {Chapter 13: Overcoming Bipolar Doping Difficulty in Wide Gap Semiconductors},
author = {Wei, S. H. and Yan, Y.},
abstractNote = {},
doi = {10.1002/9783527638529.ch13},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2011},
month = {1}
}

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