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Title: Advanced High-Longevity GaAs Photoconductive Semiconductor Switches.

Abstract

Abstract not provided.

Authors:
; ; ; ;
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1252923
Report Number(s):
SAND2015-3597C
583722
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Conference
Resource Relation:
Conference: Proposed for presentation at the DIRECTED ENERGY PROFESSIONAL SOCIETY Seventeenth Annual Directed Energy Symposium held March 2-5, 2015 in Anaheim,, California.
Country of Publication:
United States
Language:
English

Citation Formats

Mar, Alan, Zutavern, Fred J., Hjalmarson, Harold P., Vawter, Gregory A., and Gallegos, Richard Joseph. Advanced High-Longevity GaAs Photoconductive Semiconductor Switches.. United States: N. p., 2015. Web.
Mar, Alan, Zutavern, Fred J., Hjalmarson, Harold P., Vawter, Gregory A., & Gallegos, Richard Joseph. Advanced High-Longevity GaAs Photoconductive Semiconductor Switches.. United States.
Mar, Alan, Zutavern, Fred J., Hjalmarson, Harold P., Vawter, Gregory A., and Gallegos, Richard Joseph. Fri . "Advanced High-Longevity GaAs Photoconductive Semiconductor Switches.". United States. https://www.osti.gov/servlets/purl/1252923.
@article{osti_1252923,
title = {Advanced High-Longevity GaAs Photoconductive Semiconductor Switches.},
author = {Mar, Alan and Zutavern, Fred J. and Hjalmarson, Harold P. and Vawter, Gregory A. and Gallegos, Richard Joseph},
abstractNote = {Abstract not provided.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2015},
month = {5}
}

Conference:
Other availability
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