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Title: Discussion of Some 'Trap Signatures' Observed by Admittance Spectroscopy in CdTe Thin-Film Solar Cells

Journal Article · · Journal of Applied Physics
DOI:https://doi.org/10.1063/1.3475373· OSTI ID:1252892

Research Organization:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
AC36-08GO28308
OSTI ID:
1252892
Report Number(s):
NREL/JA-520-48113
Journal Information:
Journal of Applied Physics, Vol. 108, Issue 6; Related Information: Journal of Applied Physics; ISSN 0021-8979
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English

References (18)

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Simulated admittance spectroscopy measurements of high concentration deep level defects in CdTe thin-film solar cells journal August 2006
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Chemical trends of defect formation and doping limit in II-VI semiconductors: The case of CdTe journal October 2002
Effect of nitric-phosphoric acid etches on material properties and back-contact formation of CdTe-based solar cells
  • Li, Xiaonan; Niles, David W.; Hasoon, Falah S.
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Admittance spectroscopy of CdTe∕CdS solar cells subjected to varied nitric-phosphoric etching conditions journal January 2007
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The determination of carrier mobilities in CIGS photovoltaic devices using high-frequency admittance measurements journal June 2005
Interpretation of admittance, capacitance-voltage, and current-voltage signatures in Cu(In,Ga)Se2 thin film solar cells journal February 2010
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Characterization of tellurium layers for back contact formation on close to technology treated CdTe surfaces journal September 2003
Carrier transport properties of HPB CdZnTe and THM CdTe:Cl journal June 2002
Thin-film solar cells: device measurements and analysis journal March 2004
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DLTS and admittance measurements on CdS/CdTe solar cells journal May 2003