skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Metallic behavior in the graphene analogue Ni 3(HITP) 2 and a strategy to render the material a semiconductor.

Abstract

The metal organic framework material Ni 3(2,3,6,7,10,11 - hexaiminotriphenylene) 2, (Ni 3(HITP) 2) is composed of layers of extended conjugated planes analogous to graphene. We carried out Density functional theory (DFT) calculations to model the electronic structure of bulk and monolayer Ni 3(HITP) 2. The layered 3D material is metallic, similar to graphene. Our calculations predict that there is appreciable band dispersion not only in-plane, but perpendicular to the stacking planes as well, suggesting that, unlike graphene, the conductivity may be nearly isotropic. In contrast, a 2D monolayer of the material exhibits a band gap, consistent with previously published results. Insight obtained from studies of the evolution of the material from semiconducting to metallic as the material is transitioned from 2D to 3D suggests the possibility of modifying the material to render it semiconducting by changing the metal center and inserting spacer moieties between the layers. Furthermore, the DFT calculations predict that the modified material will be structurally stable and exhibit a band gap.

Authors:
 [1];  [2];  [1];  [1]
  1. Sandia National Lab. (SNL-CA), Livermore, CA (United States)
  2. Drexel Univ., Philadelphia, PA (United States)
Publication Date:
Research Org.:
Sandia National Lab. (SNL-CA), Livermore, CA (United States)
Sponsoring Org.:
USDOE Office of Energy Efficiency and Renewable Energy (EERE), Solar Energy Technologies Office (EE-4S)
OSTI Identifier:
1252693
Report Number(s):
SAND-2016-1018J
Journal ID: ISSN 1932-7447; 619121
Grant/Contract Number:  
AC04-94AL85000
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
Journal of Physical Chemistry. C
Additional Journal Information:
Journal Volume: 120; Journal Issue: 27; Journal ID: ISSN 1932-7447
Publisher:
American Chemical Society
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Foster, Michael E., Sohlberg, Karl, Spataru, Dan Catalin, and Allendorf, Mark D.. Metallic behavior in the graphene analogue Ni3(HITP)2 and a strategy to render the material a semiconductor.. United States: N. p., 2016. Web. doi:10.1021/acs.jpcc.6b05746.
Foster, Michael E., Sohlberg, Karl, Spataru, Dan Catalin, & Allendorf, Mark D.. Metallic behavior in the graphene analogue Ni3(HITP)2 and a strategy to render the material a semiconductor.. United States. doi:10.1021/acs.jpcc.6b05746.
Foster, Michael E., Sohlberg, Karl, Spataru, Dan Catalin, and Allendorf, Mark D.. Sun . "Metallic behavior in the graphene analogue Ni3(HITP)2 and a strategy to render the material a semiconductor.". United States. doi:10.1021/acs.jpcc.6b05746. https://www.osti.gov/servlets/purl/1252693.
@article{osti_1252693,
title = {Metallic behavior in the graphene analogue Ni3(HITP)2 and a strategy to render the material a semiconductor.},
author = {Foster, Michael E. and Sohlberg, Karl and Spataru, Dan Catalin and Allendorf, Mark D.},
abstractNote = {The metal organic framework material Ni3(2,3,6,7,10,11 - hexaiminotriphenylene)2, (Ni3(HITP)2) is composed of layers of extended conjugated planes analogous to graphene. We carried out Density functional theory (DFT) calculations to model the electronic structure of bulk and monolayer Ni3(HITP)2. The layered 3D material is metallic, similar to graphene. Our calculations predict that there is appreciable band dispersion not only in-plane, but perpendicular to the stacking planes as well, suggesting that, unlike graphene, the conductivity may be nearly isotropic. In contrast, a 2D monolayer of the material exhibits a band gap, consistent with previously published results. Insight obtained from studies of the evolution of the material from semiconducting to metallic as the material is transitioned from 2D to 3D suggests the possibility of modifying the material to render it semiconducting by changing the metal center and inserting spacer moieties between the layers. Furthermore, the DFT calculations predict that the modified material will be structurally stable and exhibit a band gap.},
doi = {10.1021/acs.jpcc.6b05746},
journal = {Journal of Physical Chemistry. C},
number = 27,
volume = 120,
place = {United States},
year = {Sun Jun 19 00:00:00 EDT 2016},
month = {Sun Jun 19 00:00:00 EDT 2016}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record

Citation Metrics:
Cited by: 5 works
Citation information provided by
Web of Science

Save / Share: