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Title: Dual Nature of Acceptors in GaN and ZnO: The Curious Case of the Shallow MgGa Deep State

Authors:
;
Publication Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1252662
Report Number(s):
NREL/JA-2A0-47905
Journal ID: ISSN 0003-6951
DOE Contract Number:  
AC36-08GO28308
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 96; Journal Issue: 14; Related Information: Applied Physics Letters; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; density functional theory (DFT)

Citation Formats

Lany, S., and Zunger, A. Dual Nature of Acceptors in GaN and ZnO: The Curious Case of the Shallow MgGa Deep State. United States: N. p., 2010. Web. doi:10.1063/1.3383236.
Lany, S., & Zunger, A. Dual Nature of Acceptors in GaN and ZnO: The Curious Case of the Shallow MgGa Deep State. United States. doi:10.1063/1.3383236.
Lany, S., and Zunger, A. Fri . "Dual Nature of Acceptors in GaN and ZnO: The Curious Case of the Shallow MgGa Deep State". United States. doi:10.1063/1.3383236.
@article{osti_1252662,
title = {Dual Nature of Acceptors in GaN and ZnO: The Curious Case of the Shallow MgGa Deep State},
author = {Lany, S. and Zunger, A.},
abstractNote = {},
doi = {10.1063/1.3383236},
journal = {Applied Physics Letters},
issn = {0003-6951},
number = 14,
volume = 96,
place = {United States},
year = {2010},
month = {1}
}

Works referenced in this record:

Generalized Gradient Approximation Made Simple
journal, October 1996

  • Perdew, John P.; Burke, Kieron; Ernzerhof, Matthias
  • Physical Review Letters, Vol. 77, Issue 18, p. 3865-3868
  • DOI: 10.1103/PhysRevLett.77.3865

Density-Functional Theory for Fractional Particle Number: Derivative Discontinuities of the Energy
journal, December 1982


First-principles calculations for defects and impurities: Applications to III-nitrides
journal, April 2004

  • Van de Walle, Chris G.; Neugebauer, Jörg
  • Journal of Applied Physics, Vol. 95, Issue 8
  • DOI: 10.1063/1.1682673

Assessment of correction methods for the band-gap problem and for finite-size effects in supercell defect calculations: Case studies for ZnO and GaAs
journal, December 2008


Thermal Annealing Effects on P-Type Mg-Doped GaN Films
journal, February 1992

  • Nakamura, Shuji; Mukai, Takashi; Senoh, Masayuki
  • Japanese Journal of Applied Physics, Vol. 31, Issue Part 2, No. 2B
  • DOI: 10.1143/JJAP.31.L139

Heavy doping effects in Mg-doped GaN
journal, February 2000

  • Kozodoy, Peter; Xing, Huili; DenBaars, Steven P.
  • Journal of Applied Physics, Vol. 87, Issue 4
  • DOI: 10.1063/1.372098

Polaronic hole localization and multiple hole binding of acceptors in oxide wide-gap semiconductors
journal, August 2009


A hybrid density functional study of lithium in ZnO: Stability, ionization levels, and diffusion
journal, November 2009


P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)
journal, December 1989

  • Amano, Hiroshi; Kito, Masahiro; Hiramatsu, Kazumasa
  • Japanese Journal of Applied Physics, Vol. 28, Issue Part 2, No. 12
  • DOI: 10.1143/JJAP.28.L2112

Magnetic resonance studies of Mg-doped GaN epitaxial layers grown by organometallic chemical vapor deposition
journal, February 2002


Predicting d 0 magnetism: Self-interaction correction scheme
journal, October 2008


Intrinsic defects in ZnO calculated by screened exchange and hybrid density functionals
journal, March 2010


Magnetic interactions of Cr Cr and Co Co impurity pairs in ZnO within a band-gap corrected density functional approach
journal, June 2008


From ultrasoft pseudopotentials to the projector augmented-wave method
journal, January 1999


Evidence for Two Mg Related Acceptors in GaN
journal, June 2009


Electron-energy-loss spectra and the structural stability of nickel oxide: An LSDA+U study
journal, January 1998

  • Dudarev, S. L.; Botton, G. A.; Savrasov, S. Y.
  • Physical Review B, Vol. 57, Issue 3, p. 1505-1509
  • DOI: 10.1103/PhysRevB.57.1505

Trapping and recombination processes in the thermoluminescence of Li-doped ZnO single crystals
journal, December 1972


Impurity-bound small polarons in ZnO: Hybrid density functional calculations
journal, September 2009


Anion vacancies as a source of persistent photoconductivity in II-VI and chalcopyrite semiconductors
journal, July 2005


Optical and magnetic resonance studies of Mg-doped GaN homoepitaxial layers grown by molecular beam epitaxy
journal, December 2007


On the role of group I elements in ZnO
journal, April 2007


Hole Trapping at Al impurities in Silica: A Challenge for Density Functional Theories
journal, March 2001