skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Dual Nature of Acceptors in GaN and ZnO: The Curious Case of the Shallow MgGa Deep State

Publication Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
OSTI Identifier:
Report Number(s):
Journal ID: ISSN 0003-6951
DOE Contract Number:  
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 96; Journal Issue: 14; Related Information: Applied Physics Letters; Journal ID: ISSN 0003-6951
American Institute of Physics (AIP)
Country of Publication:
United States

Citation Formats

Lany, S., and Zunger, A. Dual Nature of Acceptors in GaN and ZnO: The Curious Case of the Shallow MgGa Deep State. United States: N. p., 2010. Web. doi:10.1063/1.3383236.
Lany, S., & Zunger, A. Dual Nature of Acceptors in GaN and ZnO: The Curious Case of the Shallow MgGa Deep State. United States. doi:10.1063/1.3383236.
Lany, S., and Zunger, A. Fri . "Dual Nature of Acceptors in GaN and ZnO: The Curious Case of the Shallow MgGa Deep State". United States. doi:10.1063/1.3383236.
title = {Dual Nature of Acceptors in GaN and ZnO: The Curious Case of the Shallow MgGa Deep State},
author = {Lany, S. and Zunger, A.},
abstractNote = {},
doi = {10.1063/1.3383236},
journal = {Applied Physics Letters},
issn = {0003-6951},
number = 14,
volume = 96,
place = {United States},
year = {2010},
month = {1}

Works referenced in this record:

Generalized Gradient Approximation Made Simple
journal, October 1996

  • Perdew, John P.; Burke, Kieron; Ernzerhof, Matthias
  • Physical Review Letters, Vol. 77, Issue 18, p. 3865-3868
  • DOI: 10.1103/PhysRevLett.77.3865

Density-Functional Theory for Fractional Particle Number: Derivative Discontinuities of the Energy
journal, December 1982

First-principles calculations for defects and impurities: Applications to III-nitrides
journal, April 2004

  • Van de Walle, Chris G.; Neugebauer, Jörg
  • Journal of Applied Physics, Vol. 95, Issue 8
  • DOI: 10.1063/1.1682673

Assessment of correction methods for the band-gap problem and for finite-size effects in supercell defect calculations: Case studies for ZnO and GaAs
journal, December 2008

Thermal Annealing Effects on P-Type Mg-Doped GaN Films
journal, February 1992

  • Nakamura, Shuji; Mukai, Takashi; Senoh, Masayuki
  • Japanese Journal of Applied Physics, Vol. 31, Issue Part 2, No. 2B
  • DOI: 10.1143/JJAP.31.L139

Heavy doping effects in Mg-doped GaN
journal, February 2000

  • Kozodoy, Peter; Xing, Huili; DenBaars, Steven P.
  • Journal of Applied Physics, Vol. 87, Issue 4
  • DOI: 10.1063/1.372098

Polaronic hole localization and multiple hole binding of acceptors in oxide wide-gap semiconductors
journal, August 2009

A hybrid density functional study of lithium in ZnO: Stability, ionization levels, and diffusion
journal, November 2009

P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)
journal, December 1989

  • Amano, Hiroshi; Kito, Masahiro; Hiramatsu, Kazumasa
  • Japanese Journal of Applied Physics, Vol. 28, Issue Part 2, No. 12
  • DOI: 10.1143/JJAP.28.L2112

Magnetic resonance studies of Mg-doped GaN epitaxial layers grown by organometallic chemical vapor deposition
journal, February 2002

Predicting d 0 magnetism: Self-interaction correction scheme
journal, October 2008

Intrinsic defects in ZnO calculated by screened exchange and hybrid density functionals
journal, March 2010

Magnetic interactions of Cr Cr and Co Co impurity pairs in ZnO within a band-gap corrected density functional approach
journal, June 2008

From ultrasoft pseudopotentials to the projector augmented-wave method
journal, January 1999

Evidence for Two Mg Related Acceptors in GaN
journal, June 2009

Electron-energy-loss spectra and the structural stability of nickel oxide: An LSDA+U study
journal, January 1998

  • Dudarev, S. L.; Botton, G. A.; Savrasov, S. Y.
  • Physical Review B, Vol. 57, Issue 3, p. 1505-1509
  • DOI: 10.1103/PhysRevB.57.1505

Trapping and recombination processes in the thermoluminescence of Li-doped ZnO single crystals
journal, December 1972

Impurity-bound small polarons in ZnO: Hybrid density functional calculations
journal, September 2009

Anion vacancies as a source of persistent photoconductivity in II-VI and chalcopyrite semiconductors
journal, July 2005

Optical and magnetic resonance studies of Mg-doped GaN homoepitaxial layers grown by molecular beam epitaxy
journal, December 2007

On the role of group I elements in ZnO
journal, April 2007

Hole Trapping at Al impurities in Silica: A Challenge for Density Functional Theories
journal, March 2001