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Self-assembly of block copolymers on topographically patterned polymeric substrates

Patent ·
OSTI ID:1252417
Highly-ordered block copolymer films are prepared by a method that includes forming a polymeric replica of a topographically patterned crystalline surface, forming a block copolymer film on the topographically patterned surface of the polymeric replica, and annealing the block copolymer film. The resulting structures can be used in a variety of different applications, including the fabrication of high density data storage media. The ability to use flexible polymers to form the polymeric replica facilitates industrial-scale processes utilizing the highly-ordered block copolymer films.
Research Organization:
THE UNIVERSITY OF MASSACHUSETTS, Boston, MA (United States) THE REGENTS OF THE UNIVERSITY OF CALIFORNIA, Oakland, CA (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
FG02-96ER45612
Assignee:
THE UNIVERSITY OF MASSACHUSETTS (Boston, MA) THE REGENTS OF THE UNIVERSITY OF CALIFORNIA (Oakland, CA)
Patent Number(s):
9,335,629
Application Number:
13/546,378
OSTI ID:
1252417
Country of Publication:
United States
Language:
English

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