skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Inductively Coupled BCl3/Cl2/Ar Plasma Etching of High Al Content AlGaN.

Abstract

Abstract not provided.

Authors:
; ; ; ;
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1251549
Report Number(s):
SAND2015-3445C
583605
DOE Contract Number:
AC04-94AL85000
Resource Type:
Conference
Resource Relation:
Conference: Proposed for presentation at the Electrochemical Society Meeting held October 11-16, 2015 in Phoenix, AZ.
Country of Publication:
United States
Language:
English

Citation Formats

Douglas, Erica Ann, Allerman, Andrew A., Kaplar, Robert, Sanchez, Carlos Anthony, and Baca, Albert G. Inductively Coupled BCl3/Cl2/Ar Plasma Etching of High Al Content AlGaN.. United States: N. p., 2015. Web.
Douglas, Erica Ann, Allerman, Andrew A., Kaplar, Robert, Sanchez, Carlos Anthony, & Baca, Albert G. Inductively Coupled BCl3/Cl2/Ar Plasma Etching of High Al Content AlGaN.. United States.
Douglas, Erica Ann, Allerman, Andrew A., Kaplar, Robert, Sanchez, Carlos Anthony, and Baca, Albert G. Wed . "Inductively Coupled BCl3/Cl2/Ar Plasma Etching of High Al Content AlGaN.". United States. doi:. https://www.osti.gov/servlets/purl/1251549.
@article{osti_1251549,
title = {Inductively Coupled BCl3/Cl2/Ar Plasma Etching of High Al Content AlGaN.},
author = {Douglas, Erica Ann and Allerman, Andrew A. and Kaplar, Robert and Sanchez, Carlos Anthony and Baca, Albert G.},
abstractNote = {Abstract not provided.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Wed Apr 01 00:00:00 EDT 2015},
month = {Wed Apr 01 00:00:00 EDT 2015}
}

Conference:
Other availability
Please see Document Availability for additional information on obtaining the full-text document. Library patrons may search WorldCat to identify libraries that hold this conference proceeding.

Save / Share:
  • Abstract not provided.
  • Abstract not provided.
  • Inductively coupled plasma (ICP)–reactive ion etching (RIE) patterning is a standard processing step for UV and optical photonic devices based on III-nitride materials. There is little research on ICP-RIE of high Al-content AlGaN alloys and for nonpolar nitride orientations. The authors present a comprehensive study of the ICP-RIE of c- and a-plane AlGaN in Cl{sub 2}/Ar plasma over the entire Al composition range. The authors find that the etch rate decreases in general with increasing Al content, with different behavior for c- and a-plane AlGaN. They also study the effect of BCl{sub 3} deoxidizing plasma pretreatment. An ICP deoxidizing BCl{submore » 3} plasma with the addition of argon is more efficient in removal of surface oxides from Al{sub x}Ga{sub 1−x}N than RIE alone. These experiments show that Al{sub x}Ga{sub 1−x}N etching is affected by the higher binding energy of AlN and the higher affinity of oxygen to aluminum compared to gallium, with oxides on a-plane AlGaN more difficult to etch as compared to oxides on c-plane AlGaN, specifically for high Al composition materials. The authors achieve reasonably high etch rate (∼350 nm/min) for high Al-content materials with a smooth surface morphology at a low DC bias of ∼−45 VDC.« less
  • Varying atomic ratios in compound semiconductors is well known to have large effects on the etching properties of the material. The use of thin device barrier layers, down to 25 nm, adds to the fabrication complexity by requiring precise control over etch rates and surface morphology. The effects of bias power and gas ratio of BCl 3 to Cl 2 for inductively coupled plasma etching of high Al content AlGaN were contrasted with AlN in this study for etch rate, selectivity, and surface morphology. Etch rates were greatly affected by both bias power and gas chemistry. Here we detail themore » effects of small variations in Al composition for AlGaN and show substantial changes in etch rate with regards to bias power as compared to AlN.« less
  • Numerical simulations are performed to estimate the flux uniformity at the wafer surface for various mixtures of Cl2, BCl3 and N2, in the Sandia laboratory ICP reactor. To improve metal etch uniformity, it is desirably that the ion and neutral fluxes have uniform profiles across the wafer surface. The authors also investigate the effect of a ceramic focus ring on the flux uniformity reactor. The focus ring plays an important role in influencing the boundary conditions for the particle fluxes at the wafer edge thereby effecting the flux uniformity across the wafer surface. Numerical simulations will provide insight into themore » various conditions that may affect flux uniformity. In addition, the authors also perform parametric studies of Cl2, BCl3 and N2 mixtures for the bulk plasma and compare with experimental data. These simulations include variations in pressure, mixture ratio and power. The calculations will be performed using the HPEM and MPRES reactor simulation models.« less