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Title: Evidence for cascade overlap and grain boundary enhanced amorphization in silicon carbide irradiated with Kr ions

Journal Article · · Acta Materialia

Sponsoring Organization:
USDOE Office of Science (SC), Basic Energy Sciences (BES); USDOE Office of Nuclear Energy (NE)
Grant/Contract Number:
FG02-08ER46493; AC02-06CH11357
OSTI ID:
1251465
Journal Information:
Acta Materialia, Journal Name: Acta Materialia Vol. 99 Journal Issue: C; ISSN 1359-6454
Publisher:
ElsevierCopyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 11 works
Citation information provided by
Web of Science

References (37)

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Cascade overlap and amorphization in 3 C SiC : Defect accumulation, topological features, and disordering journal July 2002
Models and mechanisms of irradiation-induced amorphization in ceramics journal May 2000
Simulations of the mechanical properties of crystalline, nanocrystalline, and amorphous SiC and Si journal February 2007
Grain boundary mediated amorphization in silicon during ion irradiation journal January 1990
Radiation effects in SiC for nuclear structural applications journal June 2012
Ab initio based rate theory model of radiation induced amorphization in β-SiC journal July 2011
Defect production, multiple ion–solid interactions and amorphization in SiC journal May 2002
General Theory of Bimolecular Reaction Rates in Solids and Liquids journal January 1958
Experimental and ab initio study of enhanced resistance to amorphization of nanocrystalline silicon carbide under electron irradiation journal February 2014
Amorphization of SiC under ion and neutron irradiation journal May 1998
Amorphization Driven by Defect-Induced Mechanical Instability journal October 2013
Volume swelling of amorphous SiC during ion-beam irradiation journal July 2005
Origin of radiation tolerance in 3C-SiC with nanolayered planar defects journal July 2013
Computer simulation of a 10 keV Si displacement cascade in SiC
  • Devanathan, R.; Weber, W. J.; Diaz de la Rubia, T.
  • Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol. 141, Issue 1-4 https://doi.org/10.1016/S0168-583X(98)00084-6
journal May 1998
Image simulation of partially amorphous materials journal January 1993
Ion-beam induced damage and annealing behaviour in SiC journal May 1998
Response of nanocrystalline 3 C silicon carbide to heavy-ion irradiation journal October 2009
Effects of grain size and grain boundaries on defect production in nanocrystalline 3C–SiC journal May 2010
Atomic-scale simulation of 50 keV Si displacement cascades in β-SiC journal December 2000
Amorphization and recrystallization of covalent tetrahedral networks journal January 1999
Analysis of displacement cascades and threshold displacement energies in β-sic journal January 2000
Srim-2003 journal June 2004
The irradiation-induced crystalline-to-amorphous phase transition in α-SiC journal August 1996
Amorphization of nanocrystalline 3C-SiC irradiated with Si + ions journal December 2010
Temperature and irradiation species dependence of radiation response of nanocrystalline silicon carbide journal December 2014
Role of recombination kinetics and grain size in radiation-induced amorphization journal December 2012
Radiation interaction with tilt grain boundaries in β-SiC journal March 2012
Energy barriers for point-defect reactions in 3 C -SiC journal August 2013
Ion-beam induced defects and nanoscale amorphous clusters in silicon carbide journal February 2004
Analysis of grain boundary sinks and interstitial diffusion in neutron-irradiated SiC journal February 2011
Thermal conductivity of SiC after heavy ions irradiation journal January 2010
Transition from Irradiation-Induced Amorphization to Crystallization in Nanocrystalline Silicon Carbide journal October 2011

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