skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Doping concentration dependence of the photoluminescence spectra of n-type GaAs nanowires

Authors:
 [1];  [1];  [2];  [3];  [2]
  1. Department of Electrical Engineering, University of Southern California, Los Angeles, California 90089-0271, USA, Center for Energy Nanoscience, University of Southern California, Los Angeles, California 90089-0271, USA
  2. Department of Electrical Engineering, University of Southern California, Los Angeles, California 90089-0271, USA, Center for Energy Nanoscience, University of Southern California, Los Angeles, California 90089-0271, USA, Department of Chemical Engineering and Materials Science, University of Southern California, Los Angeles, California 90089-0271, USA
  3. Department of Electrical Engineering, University of Southern California, Los Angeles, California 90089-0271, USA, Center for Energy Nanoscience, University of Southern California, Los Angeles, California 90089-0271, USA, Department of Chemical Engineering and Materials Science, University of Southern California, Los Angeles, California 90089-0271, USA, Department of Physics, University of Southern California, Los Angeles, California 90089-0271, USA
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1251438
Grant/Contract Number:
SC0001013
Resource Type:
Journal Article: Publisher's Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 108; Journal Issue: 18; Related Information: CHORUS Timestamp: 2018-03-29 21:20:32; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics
Country of Publication:
United States
Language:
English

Citation Formats

Arab, Shermin, Yao, Maoqing, Zhou, Chongwu, Daniel Dapkus, P., and Cronin, Stephen B. Doping concentration dependence of the photoluminescence spectra of n-type GaAs nanowires. United States: N. p., 2016. Web. doi:10.1063/1.4947504.
Arab, Shermin, Yao, Maoqing, Zhou, Chongwu, Daniel Dapkus, P., & Cronin, Stephen B. Doping concentration dependence of the photoluminescence spectra of n-type GaAs nanowires. United States. doi:10.1063/1.4947504.
Arab, Shermin, Yao, Maoqing, Zhou, Chongwu, Daniel Dapkus, P., and Cronin, Stephen B. Fri . "Doping concentration dependence of the photoluminescence spectra of n-type GaAs nanowires". United States. doi:10.1063/1.4947504.
@article{osti_1251438,
title = {Doping concentration dependence of the photoluminescence spectra of n-type GaAs nanowires},
author = {Arab, Shermin and Yao, Maoqing and Zhou, Chongwu and Daniel Dapkus, P. and Cronin, Stephen B.},
abstractNote = {},
doi = {10.1063/1.4947504},
journal = {Applied Physics Letters},
number = 18,
volume = 108,
place = {United States},
year = {Fri May 06 00:00:00 EDT 2016},
month = {Fri May 06 00:00:00 EDT 2016}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record at 10.1063/1.4947504

Citation Metrics:
Cited by: 5works
Citation information provided by
Web of Science

Save / Share:
  • In this letter, the photoluminescence spectra of n-type doped GaAs nanowires, grown by the metal organic chemical vapor deposition method, are measured at 4 K and 77 K. Our measurements indicate that an increase in carrier concentration leads to an increase in the complexity of the doping mechanism, which we attribute to the formation of different recombination centers. At high carrier concentrations, we observe a blueshift of the effective band gap energies by up to 25 meV due to the Burstein-Moss shift. Based on the full width at half maximum (FWHM) of the photoluminescence peaks, we estimate the carrier concentrations for these nanowires,more » which varies from 6 × 10{sup 17} cm{sup −3} (lightly doped), to 1.5 × 10{sup 18} cm{sup −3} (moderately doped), to 3.5 × 10{sup 18} cm{sup −3} (heavily doped) as the partial pressure of the disilane is varied from 0.01 sccm to 1 sccm during the growth process. We find that the growth temperature variation does not affect the radiative recombination mechanism; however, it does lead to a slight enhancement in the optical emission intensities. For GaAs nanowire arrays measured at room temperature, we observe the same general dependence of band gap, FWHM, and carrier concentration on doping.« less
  • Controlled doping in semiconductor nanowires modifies their electrical and optical properties, which are important for high efficiency optoelectronic devices. We have grown n-type (Sn) doped GaAs nanowires in Aerotaxy, a new continuous gas phase mass production technique. The morphology of Sn doped nanowires is found to be a strong function of dopant, tetraethyltin to trimethylgallium flow ratio, Au-Ga-Sn alloying, and nanowire growth temperatures. High temperature and high flow ratios result in low morphological quality nanowires and in parasitic growth on the wire base and surface. Alloying and growth temperatures of 400 and 530 degrees C, respectively, resulted in good morphologicalmore » quality nanowires for a flow ratio of TESn to TMGa up to 2.25 x 10-3. The wires are pure Zinc-blende for all investigated growth conditions, whereas nanowires grown by MOVPE with the same growth conditions are usually mainly Wurtzite. The growth rate of the doped wires is found to be dependent more on the TESn flow fraction than on alloying and nanowire growth temperatures. Our photoluminescence measurements, supported by four-point probe resistivity measurements, reveal that the carrier concentration in the doped wires varies only slightly (1- 3) x 1019 cm-3 with TESn flow fraction and both alloying and growth temperatures, indicating that good morphological quality wires with high carrier density can be grown with low TESn flow. Carrier concentrations lower than 1019 cm-3 can be grown by further reducing the flow fraction of TESn, which may give better morphology wires.« less
  • We investigated the excitation power P dependence of photoluminescence (PL) spectra of GaSb type-II quantum dots (QDs) in GaAs grown by droplet epitaxy. We prepared two QD samples annealed at slightly different temperatures (380 {sup o}C and 400 {sup o}C) and carried out PL measurements. The 20 {sup o}C increase of the annealing temperature leads to (1) about 140 and 60 times stronger wetting layer (WL) luminescence at low and high P, (2) about 45% large energy shift of QD luminescence with P, and (3) the different P dependence of the PL intensity ratio between the QD and the WL. These differences ofmore » the PL characteristics are explained by the effects of the WL.« less