The magnetic ordering in high magnetoresistance Mn-doped ZnO thin films

Venkatesh, S.; Baras, A.; Lee, J. -S.; Roqan, I. S.

doi:10.1063/1.4944954

Title: The magnetic ordering in high magnetoresistance Mn-doped ZnO thin films

Journal Article · Thu Mar 24 00:00:00 EDT 2016 · AIP Advances

DOI:https://doi.org/10.1063/1.4944954· OSTI ID:1251395

Venkatesh, S. ^[1]; Baras, A. ^[1]; Lee, J. -S. ^[2]; Roqan, I. S. ^[1]

King Abdullah Univ. of Science and Technology (KAUST), Thuwal (Saudi Arabia)
SLAC National Accelerator Lab., Menlo Park, CA (United States)

Here, we studied the nature of magnetic ordering in Mn-doped ZnO thin films that exhibited ferromagnetism at 300 K and superparamagnetism at 5 K. We directly inter-related the magnetisation and magnetoresistance by invoking the polaronpercolation theory and variable range of hopping conduction below the metal-to-insulator transition. By obtaining a qualitative agreement between these two models, we attribute the ferromagnetism to the s-d exchange-induced spin splitting that was indicated by large positive magnetoresistance (~40 %). Low temperature superparamagnetism was attributed to the localization of carriers and non-interacting polaron clusters. This analysis can assist in understanding the presence or absence of ferromagnetism in doped/un-doped ZnO.

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Research Organization:: SLAC National Accelerator Laboratory (SLAC), Menlo Park, CA (United States)

Sponsoring Organization:: USDOE Office of Science (SC)

Grant/Contract Number:: AC02-76SF00515

OSTI ID:: 1251395

Journal Information:: AIP Advances, Vol. 6, Issue 3; ISSN 2158-3226

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 10 works

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