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Title: Phosphorus Doping of Polycrystalline CdTe by Diffusion

Abstract

Phosphorus diffusion in single crystal and polycrystalline CdTe material is explored using various methods. Dynamic secondary ion mass spectroscopy (SIMS) is used to determine 1D P diffusion profiles. A 2D diffusion model is used to determine the expected cross-sectional distribution of P in CdTe after diffusion anneals. Time of flight SIMS and cross-sectional cathodoluminescence corroborates expected P distributions. Devices fabricated with diffused P exhibit hole concentrations up to low 1015 cm-3, however a subsequent activation anneal enabled hole concentrations greater than 1016 cm-3. CdCl2 treatments and Cu based contacts were also explored in conjunction with the P doping process.

Authors:
; ; ; ; ; ; ; ;
Publication Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office
OSTI Identifier:
1250682
Report Number(s):
NREL/CP-5K00-63612
DOE Contract Number:  
AC36-08GO28308
Resource Type:
Conference
Resource Relation:
Conference: Presented at the 2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC), 14-19 June 2015, New Orleans, Louisiana; Related Information: Proceedings of the 2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC), 14-19 June 2015, New Orleans, Louisiana
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 36 MATERIALS SCIENCE; CdTe; doping; phosphorus; diffusion; polycrystalline

Citation Formats

Colegrove, Eric, Albin, David S., Guthrey, Harvey, Harvey, Steve, Burst, James, Moutinho, Helio, Farrell, Stuart, Al-Jassim, Mowafak, and Metzger, Wyatt K. Phosphorus Doping of Polycrystalline CdTe by Diffusion. United States: N. p., 2015. Web. doi:10.1109/PVSC.2015.7356370.
Colegrove, Eric, Albin, David S., Guthrey, Harvey, Harvey, Steve, Burst, James, Moutinho, Helio, Farrell, Stuart, Al-Jassim, Mowafak, & Metzger, Wyatt K. Phosphorus Doping of Polycrystalline CdTe by Diffusion. United States. https://doi.org/10.1109/PVSC.2015.7356370
Colegrove, Eric, Albin, David S., Guthrey, Harvey, Harvey, Steve, Burst, James, Moutinho, Helio, Farrell, Stuart, Al-Jassim, Mowafak, and Metzger, Wyatt K. 2015. "Phosphorus Doping of Polycrystalline CdTe by Diffusion". United States. https://doi.org/10.1109/PVSC.2015.7356370.
@article{osti_1250682,
title = {Phosphorus Doping of Polycrystalline CdTe by Diffusion},
author = {Colegrove, Eric and Albin, David S. and Guthrey, Harvey and Harvey, Steve and Burst, James and Moutinho, Helio and Farrell, Stuart and Al-Jassim, Mowafak and Metzger, Wyatt K.},
abstractNote = {Phosphorus diffusion in single crystal and polycrystalline CdTe material is explored using various methods. Dynamic secondary ion mass spectroscopy (SIMS) is used to determine 1D P diffusion profiles. A 2D diffusion model is used to determine the expected cross-sectional distribution of P in CdTe after diffusion anneals. Time of flight SIMS and cross-sectional cathodoluminescence corroborates expected P distributions. Devices fabricated with diffused P exhibit hole concentrations up to low 1015 cm-3, however a subsequent activation anneal enabled hole concentrations greater than 1016 cm-3. CdCl2 treatments and Cu based contacts were also explored in conjunction with the P doping process.},
doi = {10.1109/PVSC.2015.7356370},
url = {https://www.osti.gov/biblio/1250682}, journal = {},
number = ,
volume = ,
place = {United States},
year = {Sun Jun 14 00:00:00 EDT 2015},
month = {Sun Jun 14 00:00:00 EDT 2015}
}

Conference:
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