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Title: Raman shifts in electron-irradiated monolayer MoS2

Abstract

Here, we report how the presence of electron-beam-induced sulfur vacancies affects first-order Raman modes and correlate the effects with the evolution of the in situ transmission-electron microscopy (TEM) two-terminal conductivity of monolayer MoS2 under electron irradiation. We observe a redshift in the E Raman peak and a less pronounced blueshift in the A'1 peak with increasing electron dose. Using energy-dispersive X-ray spectroscopy (EDS), we show that irradiation causes partial removal of sulfur and correlate the dependence of the Raman peak shifts with S vacancy density (a few %), which is confirmed by first-principles density functional theory calculations. In situ device current measurements show exponential decrease in channel current upon irradiation. Our analysis demonstrates that the observed frequency shifts are intrinsic properties of the defective systems and that Raman spectroscopy can be used as a quantitative diagnostic tool to characterize MoS2-based transport channels.

Authors:
 [1];  [1];  [2];  [1];  [3];  [1];  [1];  [1];  [3];  [1]
  1. Univ. of Pennsylvania, Philadelphia, PA (United States)
  2. Rensselaer Polytechnic Inst., Troy, NY (United States); Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
  3. Rensselaer Polytechnic Inst., Troy, NY (United States)
Publication Date:
Research Org.:
Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
Sponsoring Org.:
USDOE Office of Science (SC)
OSTI Identifier:
1250414
Grant/Contract Number:  
AC05-00OR22725
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
ACS Nano
Additional Journal Information:
Journal Volume: 10; Journal Issue: 4; Journal ID: ISSN 1936-0851
Publisher:
American Chemical Society
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; 37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY; MoS2; two-dimensional material; Raman; in situ transmission electron microscopy; transition-metal dichalcogenide

Citation Formats

Parkin, William M., Balan, Adrian, Liang, Liangbo, Das, Paul Masih, Lamparski, Michael, Naylor, Carl H., Rodríguez-Manzo, Julio A., Johnson, A. T. Charlie, Meunier, Vincent, and Drndic, Marija. Raman shifts in electron-irradiated monolayer MoS2. United States: N. p., 2016. Web. doi:10.1021/acsnano.5b07388.
Parkin, William M., Balan, Adrian, Liang, Liangbo, Das, Paul Masih, Lamparski, Michael, Naylor, Carl H., Rodríguez-Manzo, Julio A., Johnson, A. T. Charlie, Meunier, Vincent, & Drndic, Marija. Raman shifts in electron-irradiated monolayer MoS2. United States. https://doi.org/10.1021/acsnano.5b07388
Parkin, William M., Balan, Adrian, Liang, Liangbo, Das, Paul Masih, Lamparski, Michael, Naylor, Carl H., Rodríguez-Manzo, Julio A., Johnson, A. T. Charlie, Meunier, Vincent, and Drndic, Marija. 2016. "Raman shifts in electron-irradiated monolayer MoS2". United States. https://doi.org/10.1021/acsnano.5b07388. https://www.osti.gov/servlets/purl/1250414.
@article{osti_1250414,
title = {Raman shifts in electron-irradiated monolayer MoS2},
author = {Parkin, William M. and Balan, Adrian and Liang, Liangbo and Das, Paul Masih and Lamparski, Michael and Naylor, Carl H. and Rodríguez-Manzo, Julio A. and Johnson, A. T. Charlie and Meunier, Vincent and Drndic, Marija},
abstractNote = {Here, we report how the presence of electron-beam-induced sulfur vacancies affects first-order Raman modes and correlate the effects with the evolution of the in situ transmission-electron microscopy (TEM) two-terminal conductivity of monolayer MoS2 under electron irradiation. We observe a redshift in the E Raman peak and a less pronounced blueshift in the A'1 peak with increasing electron dose. Using energy-dispersive X-ray spectroscopy (EDS), we show that irradiation causes partial removal of sulfur and correlate the dependence of the Raman peak shifts with S vacancy density (a few %), which is confirmed by first-principles density functional theory calculations. In situ device current measurements show exponential decrease in channel current upon irradiation. Our analysis demonstrates that the observed frequency shifts are intrinsic properties of the defective systems and that Raman spectroscopy can be used as a quantitative diagnostic tool to characterize MoS2-based transport channels.},
doi = {10.1021/acsnano.5b07388},
url = {https://www.osti.gov/biblio/1250414}, journal = {ACS Nano},
issn = {1936-0851},
number = 4,
volume = 10,
place = {United States},
year = {Mon Mar 21 00:00:00 EDT 2016},
month = {Mon Mar 21 00:00:00 EDT 2016}
}

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Cited by: 287 works
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Works referencing / citing this record:

Photoresponsive behavior of electron-beam irradiated MoS 2 films
journal, October 2018


Robust valley polarization of helium ion modified atomically thin MoS 2
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Anomalous lattice vibrations of CVD-grown monolayer MoS 2 probed using linear polarized excitation light
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E’’ Raman Mode in Thermal Strain-Fractured CVD-MoS2
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Polarized Raman spectroscopy to elucidate the texture of synthesized MoS 2
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Electrical and geometrical tuning of MoS 2 field effect transistors via direct nanopatterning
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Metal–organic framework-derived hierarchical MoS 2 /CoS 2 nanotube arrays as pH-universal electrocatalysts for efficient hydrogen evolution
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Effect of vacancies on the structural and electronic properties of Ti 2 CO 2
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Hole Injection and Rectifying Heterojunction Photodiodes through Vacancy Engineering in MoS 2
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Uncovering edge states and electrical inhomogeneity in MoS 2 field-effect transistors
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Influence of impurities on structural, electronic and optical properties of graphene-like nano-layers MoSe 2
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Solution-processable 2D semiconductors for high-performance large-area electronics
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Irradiation of Transition Metal Dichalcogenides Using a Focused Ion Beam: Controlled Single‐Atom Defect Creation
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Enhanced Photocurrent Generation in Proton‐Irradiated “Giant” CdSe/CdS Core/Shell Quantum Dots
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