skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Characterization and correction of charge-induced pixel shifts in DECam

Abstract

Interaction of charges in CCDs with the already accumulated charge distribution causes both a flux dependence of the point-spread function (an increase of observed size with flux, also known as the brighter/fatter effect) and pixel-to-pixel correlations of the {Poissonian} noise in flat fields. We describe these effects in the Dark Energy Camera (DECam) with charge dependent shifts of effective pixel borders, i.e. the Antilogus et al. (2014) model, which we fit to measurements of flat-field {Poissonian} noise correlations. The latter fall off approximately as a power-law r(-)(2.5) with pixel separation r, are isotropic except for an asymmetry in the direct neighbors along rows and columns, are stable in time, and are weakly dependent on wavelength. They show variations from chip to chip at the 20% level that correlate with the silicon resistivity. The charge shifts predicted by the model cause biased shape measurements, primarily due to their effect on bright stars, at levels exceeding weak lensing science requirements. We measure the flux dependence of star images and show that the effect can be mitigated by applying the reverse charge shifts at the pixel level during image processing. Differences in stellar size, however, remain significant due to residuals at larger distancemore » from the centroid.« less

Authors:
; ; ; ; ; ;
Publication Date:
Research Org.:
Argonne National Lab. (ANL), Argonne, IL (United States); Brookhaven National Laboratory (BNL), Upton, NY (United States); Fermi National Accelerator Lab. (FNAL), Batavia, IL (United States)
Sponsoring Org.:
USDOE Office of Science (SC), High Energy Physics (HEP) (SC-25)
OSTI Identifier:
1249517
Report Number(s):
FERMILAB-CONF-15-007; arXiv:1501.02802
Journal ID: ISSN 1748-0221; 1338545
DOE Contract Number:  
AC02-07CH11359
Resource Type:
Conference
Journal Name:
Journal of Instrumentation
Additional Journal Information:
Journal Volume: 10; Journal Issue: 05; Conference: Precision Astronomy with Fully Depleted CCDs, Upton, New York, 12/04-12/05/2014; Journal ID: ISSN 1748-0221
Publisher:
Institute of Physics (IOP)
Country of Publication:
United States
Language:
English
Subject:
79 ASTRONOMY AND ASTROPHYSICS; 46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY

Citation Formats

Gruen, D., Bernstein, G. M., Jarvis, M., Rowe, B., Vikram, V., Plazas, A. A., and Seitz, S. Characterization and correction of charge-induced pixel shifts in DECam. United States: N. p., 2015. Web. doi:10.1088/1748-0221/10/05/C05032.
Gruen, D., Bernstein, G. M., Jarvis, M., Rowe, B., Vikram, V., Plazas, A. A., & Seitz, S. Characterization and correction of charge-induced pixel shifts in DECam. United States. doi:10.1088/1748-0221/10/05/C05032.
Gruen, D., Bernstein, G. M., Jarvis, M., Rowe, B., Vikram, V., Plazas, A. A., and Seitz, S. Fri . "Characterization and correction of charge-induced pixel shifts in DECam". United States. doi:10.1088/1748-0221/10/05/C05032. https://www.osti.gov/servlets/purl/1249517.
@article{osti_1249517,
title = {Characterization and correction of charge-induced pixel shifts in DECam},
author = {Gruen, D. and Bernstein, G. M. and Jarvis, M. and Rowe, B. and Vikram, V. and Plazas, A. A. and Seitz, S.},
abstractNote = {Interaction of charges in CCDs with the already accumulated charge distribution causes both a flux dependence of the point-spread function (an increase of observed size with flux, also known as the brighter/fatter effect) and pixel-to-pixel correlations of the {Poissonian} noise in flat fields. We describe these effects in the Dark Energy Camera (DECam) with charge dependent shifts of effective pixel borders, i.e. the Antilogus et al. (2014) model, which we fit to measurements of flat-field {Poissonian} noise correlations. The latter fall off approximately as a power-law r(-)(2.5) with pixel separation r, are isotropic except for an asymmetry in the direct neighbors along rows and columns, are stable in time, and are weakly dependent on wavelength. They show variations from chip to chip at the 20% level that correlate with the silicon resistivity. The charge shifts predicted by the model cause biased shape measurements, primarily due to their effect on bright stars, at levels exceeding weak lensing science requirements. We measure the flux dependence of star images and show that the effect can be mitigated by applying the reverse charge shifts at the pixel level during image processing. Differences in stellar size, however, remain significant due to residuals at larger distance from the centroid.},
doi = {10.1088/1748-0221/10/05/C05032},
journal = {Journal of Instrumentation},
issn = {1748-0221},
number = 05,
volume = 10,
place = {United States},
year = {2015},
month = {5}
}

Conference:
Other availability
Please see Document Availability for additional information on obtaining the full-text document. Library patrons may search WorldCat to identify libraries that hold this conference proceeding.

Save / Share: