Thermal Conductivity Comparison of Indium Gallium Zinc Oxide Thin Films: Dependence on Temperature, Crystallinity, and Porosity
- Northwestern Univ., Evanston, IL (United States)
- Northwestern Univ., Evanston, IL (United States); Northwestern Synchrotron Research Center, Argonne, IL (United States)
- Polyera Corporation, Skokie, IL (United States)
- Northwestern Univ., Evanston, IL (United States); Polyera Corporation, Skokie, IL (United States)
- Missouri Univ. of Science and Technology, Rolla, MO (United States)
Here, the cross-plane thermal conductivity of InGaZnO (IGZO) thin films was measured using the 3ω technique from 18 to 300 K. The studied morphologies include amorphous (a-IGZO), semicrystalline (semi-c-IGZO), and c-axis-aligned single-crystal-like IGZO (c-IGZO) grown by pulsed laser deposition (PLD) as well as a-IGZO deposited by sputtering and by solution combustion processing. The atomic structures of the amorphous and crystalline films were simulated with ab initio molecular dynamics. The film quality and texturing information was assessed by X-ray diffraction and grazing incidence wide-angle X-ray scattering. X-ray reflectivity was also conducted to quantify film densities and porosities. All the high-density films exhibit an empirical power-law temperature dependence of the thermal conductivity $$κ \sim T^{0.6}$$ in the specified temperature range. Among the PLD dense films, semi-c-IGZO exhibits the highest thermal conductivity, remarkably exceeding both films with more order (c-IGZO) and with less order (a-IGZO) by a factor of 4. The less dense combustion-synthesized films, on the other hand, exhibited lower thermal conductivity, quantitatively consistent with a porous film using either an effective medium or percolation model. All samples are consistent with the porosity-adapted Cahill–Pohl (p-CP) model of minimum thermal conductivity.
- Research Organization:
- Argonne National Laboratory (ANL), Argonne, IL (United States). Advanced Photon Source (APS)
- Sponsoring Organization:
- National Science Foundation (NSF); International Institute for Nanotechnology (IIN); State of Illinois
- OSTI ID:
- 1249245
- Journal Information:
- Journal of Physical Chemistry. C, Vol. 120, Issue 14; ISSN 1932-7447
- Publisher:
- American Chemical SocietyCopyright Statement
- Country of Publication:
- United States
- Language:
- ENGLISH
Web of Science
Aqueous Solution Processing of Combustible Precursor Compounds into Amorphous Indium Gallium Zinc Oxide (IGZO) Semiconductors for Thin Film Transistor Applications
|
journal | November 2018 |
Wearable 1 V operating thin-film transistors with solution-processed metal-oxide semiconductor and dielectric films fabricated by deep ultra-violet photo annealing at low temperature
|
journal | June 2019 |
Cationic compositional effects on the bias-stress stabilities of thin film transistors using In–Ga–Zn–O channels prepared by atomic layer deposition
|
journal | January 2019 |
Similar Records
High performance indium gallium zinc oxide thin film transistors fabricated on polyethylene terephthalate substrates
Coplanar amorphous-indium-gallium-zinc-oxide thin film transistor with He plasma treated heavily doped layer