A method for determining average damage depth of sawn crystalline silicon wafers
- National Renewable Energy Lab. (NREL), Golden, CO (United States)
- National Renewable Energy Lab. (NREL), Golden, CO (United States); New Jersey Inst. of Technology, Newark, NJ (United States)
The depth of surface damage (or simply, damage) in crystalline silicon wafers, caused by wire sawing of ingots, is determined by performing a series of minority carrier lifetime (MCLT) measurements. Samples are sequentially etched to remove thin layers from each surface and MCLT is measured after each etch step. The thickness-removed (δt) at which the lifetime reaches a peak value corresponds to the damage depth. This technique also allows the damage to be quantified in terms of effective surface recombination velocity (Seff). To accomplish this, the MCLT data are converted into an Seff vs δt plot, which represents a quantitative distribution of the degree of damage within the surface layer. We describe a wafer preparation procedure to attain reproducible etching and MCLT measurement results. We also describe important characteristics of an etchant used for controllably removing thin layers from the wafer surfaces. Lastly, some typical results showing changes in the MCLT vs δt plots for different cutting parameters are given.
- Research Organization:
- National Renewable Energy Lab. (NREL), Golden, CO (United States)
- Sponsoring Organization:
- USDOE Office of Energy Efficiency and Renewable Energy (EERE)
- Grant/Contract Number:
- AC36-08GO28308
- OSTI ID:
- 1248799
- Alternate ID(s):
- OSTI ID: 1245685
- Report Number(s):
- NREL/JA-5J00-66320; RSINAK
- Journal Information:
- Review of Scientific Instruments, Vol. 87, Issue 4; Related Information: Review of Scientific Instruments; ISSN 0034-6748
- Publisher:
- American Institute of Physics (AIP)Copyright Statement
- Country of Publication:
- United States
- Language:
- English
Web of Science
Similar Records
Surface characteristics and damage distributions of diamond wire sawn wafers for silicon solar cells
Dissolution of Oxygen Precipitate Nuclei in n-Type CZ-Si Wafers to Improve Their Material Quality: Experimental Results