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Title: Two-dimensional GaSe/MoSe 2 misfit bilayer heterojunctions by van der Waals epitaxy

Abstract

Two-dimensional (2D) heterostructures hold the promise for future atomically thin electronics and optoelectronics because of their diverse functionalities. Although heterostructures consisting of different 2D materials with well-matched lattices and novel physical properties have been successfully fabricated via van der Waals (vdW) epitaxy, constructing heterostructures from layered semiconductors with large lattice misfits remains challenging. We report the growth of 2D GaSe/MoSe 2heterostructures with a large lattice misfit using two-step chemical vapor deposition (CVD). Both vertically stacked and lateral heterostructures are demonstrated. The vertically stacked GaSe/MoSe 2heterostructures exhibit vdW epitaxy with well-aligned lattice orientation between the two layers, forming a periodic superlattice. However, the lateral heterostructures exhibit no lateral epitaxial alignment at the interface between GaSe and MoSe 2crystalline domains. Instead of a direct lateral connection at the boundary region where the same lattice orientation is observed between GaSe and MoSe 2monolayer domains in lateral GaSe/MoSe 2heterostructures, GaSe monolayers are found to overgrow MoSe 2during CVD, forming a stripe of vertically stacked vdW heterostructures at the crystal interface. Such vertically stacked vdW GaSe/MoSe 2heterostructures are shown to formp-njunctions with effective transport and separation of photogenerated charge carriers between layers, resulting in a gate-tunable photovoltaic response. These GaSe/MoSe 2vdW heterostructures should have applicationsmore » as gate-tunable field-effect transistors, photodetectors, and solar cells.« less

Authors:
 [1];  [1];  [2];  [3];  [1];  [1];  [1];  [4];  [5];  [1];  [1];  [1];  [1];  [1];  [1]
  1. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Science (CNMS)
  2. Vanderbilt Univ., Nashville, TN (United States); Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Materials Science and Technology Division
  3. Beijing Computational Science Research Center, Beijing, (China); Univ. of Utah, Salt Lake City, UT (United States)
  4. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Materials Science and Technology Division
  5. Vanderbilt Univ., Nashville, TN (United States); Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Materials Science and Technology Division
Publication Date:
Research Org.:
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Sciences (CNMS); Vanderbilt Univ., Nashville, TN (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
OSTI Identifier:
1248775
Alternate Identifier(s):
OSTI ID: 1597771
Grant/Contract Number:  
AC05-00OR22725; FG02-09ER46554
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
Science Advances
Additional Journal Information:
Journal Volume: 2; Journal Issue: 4; Journal ID: ISSN 2375-2548
Publisher:
AAAS
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; Two-dimensional; van der Waals epitaxylattice-misfit; heterostructure; photovoltaic

Citation Formats

Li, Xufan, Lin, Ming-Wei, Lin, Junhao, Huang, Bing, Puretzky, Alexander A., Ma, Cheng, Wang, Kai, Zhou, Wu, Pantelides, Sokrates T., Chi, Miaofang, Kravchenko, Ivan, Fowlkes, Jason, Rouleau, Christopher M., Geohegan, David B., and Xiao, Kai. Two-dimensional GaSe/MoSe2 misfit bilayer heterojunctions by van der Waals epitaxy. United States: N. p., 2016. Web. doi:10.1126/sciadv.1501882.
Li, Xufan, Lin, Ming-Wei, Lin, Junhao, Huang, Bing, Puretzky, Alexander A., Ma, Cheng, Wang, Kai, Zhou, Wu, Pantelides, Sokrates T., Chi, Miaofang, Kravchenko, Ivan, Fowlkes, Jason, Rouleau, Christopher M., Geohegan, David B., & Xiao, Kai. Two-dimensional GaSe/MoSe2 misfit bilayer heterojunctions by van der Waals epitaxy. United States. doi:10.1126/sciadv.1501882.
Li, Xufan, Lin, Ming-Wei, Lin, Junhao, Huang, Bing, Puretzky, Alexander A., Ma, Cheng, Wang, Kai, Zhou, Wu, Pantelides, Sokrates T., Chi, Miaofang, Kravchenko, Ivan, Fowlkes, Jason, Rouleau, Christopher M., Geohegan, David B., and Xiao, Kai. Fri . "Two-dimensional GaSe/MoSe2 misfit bilayer heterojunctions by van der Waals epitaxy". United States. doi:10.1126/sciadv.1501882. https://www.osti.gov/servlets/purl/1248775.
@article{osti_1248775,
title = {Two-dimensional GaSe/MoSe2 misfit bilayer heterojunctions by van der Waals epitaxy},
author = {Li, Xufan and Lin, Ming-Wei and Lin, Junhao and Huang, Bing and Puretzky, Alexander A. and Ma, Cheng and Wang, Kai and Zhou, Wu and Pantelides, Sokrates T. and Chi, Miaofang and Kravchenko, Ivan and Fowlkes, Jason and Rouleau, Christopher M. and Geohegan, David B. and Xiao, Kai},
abstractNote = {Two-dimensional (2D) heterostructures hold the promise for future atomically thin electronics and optoelectronics because of their diverse functionalities. Although heterostructures consisting of different 2D materials with well-matched lattices and novel physical properties have been successfully fabricated via van der Waals (vdW) epitaxy, constructing heterostructures from layered semiconductors with large lattice misfits remains challenging. We report the growth of 2D GaSe/MoSe2heterostructures with a large lattice misfit using two-step chemical vapor deposition (CVD). Both vertically stacked and lateral heterostructures are demonstrated. The vertically stacked GaSe/MoSe2heterostructures exhibit vdW epitaxy with well-aligned lattice orientation between the two layers, forming a periodic superlattice. However, the lateral heterostructures exhibit no lateral epitaxial alignment at the interface between GaSe and MoSe2crystalline domains. Instead of a direct lateral connection at the boundary region where the same lattice orientation is observed between GaSe and MoSe2monolayer domains in lateral GaSe/MoSe2heterostructures, GaSe monolayers are found to overgrow MoSe2during CVD, forming a stripe of vertically stacked vdW heterostructures at the crystal interface. Such vertically stacked vdW GaSe/MoSe2heterostructures are shown to formp-njunctions with effective transport and separation of photogenerated charge carriers between layers, resulting in a gate-tunable photovoltaic response. These GaSe/MoSe2vdW heterostructures should have applications as gate-tunable field-effect transistors, photodetectors, and solar cells.},
doi = {10.1126/sciadv.1501882},
journal = {Science Advances},
issn = {2375-2548},
number = 4,
volume = 2,
place = {United States},
year = {2016},
month = {4}
}

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