Two-dimensional GaSe/MoSe2 misfit bilayer heterojunctions by van der Waals epitaxy

Li, Xufan; Lin, Ming-Wei; Lin, Junhao; Huang, Bing; Puretzky, Alexander A.; Ma, Cheng; Wang, Kai; Zhou, Wu; Pantelides, Sokrates T.; Chi, Miaofang; Kravchenko, Ivan; Fowlkes, Jason; Rouleau, Christopher M.; Geohegan, David B.; Xiao, Kai

doi:10.1126/sciadv.1501882

Title: Two-dimensional GaSe/MoSe₂ misfit bilayer heterojunctions by van der Waals epitaxy

Journal Article · Fri Apr 01 00:00:00 EDT 2016 · Science Advances

DOI:https://doi.org/10.1126/sciadv.1501882· OSTI ID:1248775

Li, Xufan ^[1]; Lin, Ming-Wei ^[1]; Lin, Junhao ^[2]; Huang, Bing ^[3]; Puretzky, Alexander A. ^[1]; Ma, Cheng ^[1]; Wang, Kai ^[1]; Zhou, Wu ^[4]; Pantelides, Sokrates T. ^[5]; Chi, Miaofang ^[1]; Kravchenko, Ivan ^[1]; Fowlkes, Jason ^[1]; Rouleau, Christopher M. ^[1]; Geohegan, David B. ^[1]; Xiao, Kai ^[1]

Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Science (CNMS)
Vanderbilt Univ., Nashville, TN (United States); Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Materials Science and Technology Division
Beijing Computational Science Research Center, Beijing, (China); Univ. of Utah, Salt Lake City, UT (United States)
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Materials Science and Technology Division
Vanderbilt Univ., Nashville, TN (United States); Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Materials Science and Technology Division

Two-dimensional (2D) heterostructures hold the promise for future atomically thin electronics and optoelectronics because of their diverse functionalities. Although heterostructures consisting of different 2D materials with well-matched lattices and novel physical properties have been successfully fabricated via van der Waals (vdW) epitaxy, constructing heterostructures from layered semiconductors with large lattice misfits remains challenging. We report the growth of 2D GaSe/MoSe₂heterostructures with a large lattice misfit using two-step chemical vapor deposition (CVD). Both vertically stacked and lateral heterostructures are demonstrated. The vertically stacked GaSe/MoSe₂heterostructures exhibit vdW epitaxy with well-aligned lattice orientation between the two layers, forming a periodic superlattice. However, the lateral heterostructures exhibit no lateral epitaxial alignment at the interface between GaSe and MoSe₂crystalline domains. Instead of a direct lateral connection at the boundary region where the same lattice orientation is observed between GaSe and MoSe₂monolayer domains in lateral GaSe/MoSe₂heterostructures, GaSe monolayers are found to overgrow MoSe₂during CVD, forming a stripe of vertically stacked vdW heterostructures at the crystal interface. Such vertically stacked vdW GaSe/MoSe₂heterostructures are shown to formp-njunctions with effective transport and separation of photogenerated charge carriers between layers, resulting in a gate-tunable photovoltaic response. These GaSe/MoSe₂vdW heterostructures should have applications as gate-tunable field-effect transistors, photodetectors, and solar cells.

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Research Organization:: Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Sciences (CNMS); Vanderbilt Univ., Nashville, TN (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: AC05-00OR22725; FG02-09ER46554

OSTI ID:: 1248775

Alternate ID(s):: OSTI ID: 1597771

Journal Information:: Science Advances, Vol. 2, Issue 4; ISSN 2375-2548

Publisher:: AAASCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 158 works

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Influence of van der Waals epitaxy on phase transformation behaviors in 2D heterostructure Dong, Jiyu; Liu, Lixuan; Nie, Anmin Applied Physics Letters, Vol. 116, Issue 2 https://doi.org/10.1063/1.5131039	journal	January 2020
Impact of a van der Waals interface on intrinsic and extrinsic defects in an MoSe ₂ monolayer Alvarez, Carlos J.; Dau, Minh Tuan; Marty, Alain Nanotechnology, Vol. 29, Issue 42 https://doi.org/10.1088/1361-6528/aad66f	journal	August 2018
2D materials advances: from large scale synthesis and controlled heterostructures to improved characterization techniques, defects and applications Lin, Zhong; McCreary, Amber; Briggs, Natalie 2D Materials, Vol. 3, Issue 4 https://doi.org/10.1088/2053-1583/3/4/042001	journal	December 2016
A roadmap for electronic grade 2D materials Briggs, Natalie; Subramanian, Shruti; Lin, Zhong 2D Materials, Vol. 6, Issue 2 https://doi.org/10.1088/2053-1583/aaf836	journal	January 2019
2D SnSe/Si heterojunction for self-driven broadband photodetectors Hao, Lanzhong; Wang, Zegao; Xu, Hanyang 2D Materials, Vol. 6, Issue 3 https://doi.org/10.1088/2053-1583/ab15f7	journal	May 2019
Superconducting Ga/GaSe layers grown by van der Waals epitaxy Desrat, W.; Moret, M.; Briot, O. Materials Research Express, Vol. 5, Issue 4 https://doi.org/10.1088/2053-1591/aab8c5	journal	April 2018
Strain in van der Waals epitaxy and evidence for a collective macroscopic effect of a negligibly small perturbation Zhu, Zhili; Cui, Ping; Jia, Yu Physical Review B, Vol. 100, Issue 3 https://doi.org/10.1103/physrevb.100.035429	journal	July 2019
Tunable quasiparticle band gap in few-layer GaSe/graphene van der Waals heterostructures Ben Aziza, Zeineb; Pierucci, Debora; Henck, Hugo Physical Review B, Vol. 96, Issue 3 https://doi.org/10.1103/physrevb.96.035407	journal	July 2017
Interface dipole and band bending in the hybrid $p - n$ heterojunction $Mo S_{2} / GaN (0001)$ Henck, Hugo; Ben Aziza, Zeineb; Zill, Olivia Physical Review B, Vol. 96, Issue 11 https://doi.org/10.1103/physrevb.96.115312	journal	September 2017
Direct Vapor Phase Growth and Optoelectronic Application of Large Band Offset SnS ₂ /MoS ₂ Vertical Bilayer Heterostructures with High Lattice Mismatch Li, Bo; Huang, Le; Zhong, Mianzeng Advanced Electronic Materials, Vol. 2, Issue 11 https://doi.org/10.1002/aelm.201600298	journal	October 2016
Curvature-dependent flexible light emission from layered gallium selenide crystals Chuang, Ching-An; Lin, Min-Han; Yeh, Bo-Xian RSC Advances, Vol. 8, Issue 5 https://doi.org/10.1039/c7ra11600d	journal	January 2018
High-throughput screening and classification of layered di-metal chalcogenides Wei, Jinchen; Wang, Chao; Zhang, Tao Nanoscale, Vol. 11, Issue 29 https://doi.org/10.1039/c9nr03752g	journal	January 2019
Monolayer MoSe ₂ /NiO van der Waals heterostructures for infrared light-emitting diodes Wang, Caiyun; Kang, Zhe; Zheng, Zhi Journal of Materials Chemistry C, Vol. 7, Issue 43 https://doi.org/10.1039/c9tc04481g	journal	January 2019
Tunable Quasiparticle Band Gap in Few Layer GaSe/graphene Van der Waals Heterostructures Aziza, Zeineb Ben; Pierucci, Debora; Henck, Hugo arXiv https://doi.org/10.48550/arxiv.1707.01288	text	January 2017
Transition Metal Adsorbed-Doped ZnO Monolayer: 2D Dilute Magnetic Semiconductor, Magnetic Mechanism, and Beyond 2D Zhang, Meng; Shi, Xinying; Wang, Xiao ACS Omega, Vol. 2, Issue 3 https://doi.org/10.1021/acsomega.7b00093	journal	March 2017
Introducing Overlapping Grain Boundaries in Chemical Vapor Deposited Hexagonal Boron Nitride Monolayer Films. Bayer, Bernhard C.; Caneva, Sabina; Pennycook, Timothy J. American Chemical Society (ACS) https://doi.org/10.17863/cam.22814	journalarticle	January 2017

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Title: Two-dimensional GaSe/MoSe₂ misfit bilayer heterojunctions by van der Waals epitaxy