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Title: Generation-Recombination in Radiation Damaged III-V Heterojunction Bipolar Transistors.


Abstract not provided.

; ; ;
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
Report Number(s):
DOE Contract Number:
Resource Type:
Resource Relation:
Conference: Proposed for presentation at the 2015 Hardened Electronics and Radiation Technology Technical Interchange Meeting held April 21-24, 2015 in Chantilly, VA.
Country of Publication:
United States

Citation Formats

Fleming, Robert M., Wampler, William R., Myers, Samuel M.,, and King, Donald B.. Generation-Recombination in Radiation Damaged III-V Heterojunction Bipolar Transistors.. United States: N. p., 2015. Web.
Fleming, Robert M., Wampler, William R., Myers, Samuel M.,, & King, Donald B.. Generation-Recombination in Radiation Damaged III-V Heterojunction Bipolar Transistors.. United States.
Fleming, Robert M., Wampler, William R., Myers, Samuel M.,, and King, Donald B.. 2015. "Generation-Recombination in Radiation Damaged III-V Heterojunction Bipolar Transistors.". United States. doi:.
title = {Generation-Recombination in Radiation Damaged III-V Heterojunction Bipolar Transistors.},
author = {Fleming, Robert M. and Wampler, William R. and Myers, Samuel M., and King, Donald B.},
abstractNote = {Abstract not provided.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = 2015,
month = 4

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