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Title: Photoluminescence evolution in GaAs/AlGaAs core/shell nanowires grown by MOCVD: Effects of core growth temperature and substrate orientation

Authors:
; ; ; ; ; ; ;
Publication Date:
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1248423
Grant/Contract Number:
SC0001304
Resource Type:
Journal Article: Publisher's Accepted Manuscript
Journal Name:
Journal of Crystal Growth
Additional Journal Information:
Journal Volume: 429; Journal Issue: C; Related Information: CHORUS Timestamp: 2017-10-04 15:17:55; Journal ID: ISSN 0022-0248
Publisher:
Elsevier
Country of Publication:
Netherlands
Language:
English

Citation Formats

Chiu, Yi-Hsin, Minutillo, Nicholas G., Williams, Robert E. A., Smith, Greg J., McComb, David W., Carlin, John A., Johnston-Halperin, Ezekiel, and Yang, Fengyuan. Photoluminescence evolution in GaAs/AlGaAs core/shell nanowires grown by MOCVD: Effects of core growth temperature and substrate orientation. Netherlands: N. p., 2015. Web. doi:10.1016/j.jcrysgro.2015.07.025.
Chiu, Yi-Hsin, Minutillo, Nicholas G., Williams, Robert E. A., Smith, Greg J., McComb, David W., Carlin, John A., Johnston-Halperin, Ezekiel, & Yang, Fengyuan. Photoluminescence evolution in GaAs/AlGaAs core/shell nanowires grown by MOCVD: Effects of core growth temperature and substrate orientation. Netherlands. doi:10.1016/j.jcrysgro.2015.07.025.
Chiu, Yi-Hsin, Minutillo, Nicholas G., Williams, Robert E. A., Smith, Greg J., McComb, David W., Carlin, John A., Johnston-Halperin, Ezekiel, and Yang, Fengyuan. Sun . "Photoluminescence evolution in GaAs/AlGaAs core/shell nanowires grown by MOCVD: Effects of core growth temperature and substrate orientation". Netherlands. doi:10.1016/j.jcrysgro.2015.07.025.
@article{osti_1248423,
title = {Photoluminescence evolution in GaAs/AlGaAs core/shell nanowires grown by MOCVD: Effects of core growth temperature and substrate orientation},
author = {Chiu, Yi-Hsin and Minutillo, Nicholas G. and Williams, Robert E. A. and Smith, Greg J. and McComb, David W. and Carlin, John A. and Johnston-Halperin, Ezekiel and Yang, Fengyuan},
abstractNote = {},
doi = {10.1016/j.jcrysgro.2015.07.025},
journal = {Journal of Crystal Growth},
number = C,
volume = 429,
place = {Netherlands},
year = {Sun Nov 01 00:00:00 EDT 2015},
month = {Sun Nov 01 00:00:00 EDT 2015}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record at 10.1016/j.jcrysgro.2015.07.025

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  • We report on realization of the InGaAs/GaAs/AlGaAs quantum well laser grown by metallorganic chemical vapor deposition on a virtual Ge-on-Si(001) substrate. The Ge buffer layer has been grown on a nominal Si(001) substrate by solid-source molecular beam epitaxy. Such Ge buffer possessed rather good crystalline quality and smooth surface and so provided the subsequent growth of the high-quality A{sub 3}B{sub 5} laser structure. The laser operation has been demonstrated under electrical pumping at 77 K in the continuous wave mode and at room temperature in the pulsed mode. The emission wavelengths of 941 nm and 992 nm have been obtained at 77 K andmore » 300 K, respectively. The corresponding threshold current densities were estimated as 463 A/cm{sup 2} at 77 K and 5.5 kA/cm{sup 2} at 300 K.« less
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