Energy storage device with large charge separation
Patent
·
OSTI ID:1246835
High density energy storage in semiconductor devices is provided. There are two main aspects of the present approach. The first aspect is to provide high density energy storage in semiconductor devices based on formation of a plasma in the semiconductor. The second aspect is to provide high density energy storage based on charge separation in a p-n junction.
- Research Organization:
- Stanford Univ., CA (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AR0000069
- Assignee:
- The Board of Trustees of the Leland Stanford Junior University (Palo Alto, CA)
- Patent Number(s):
- 9,312,398
- Application Number:
- 13/135,798
- OSTI ID:
- 1246835
- Resource Relation:
- Patent File Date: 2011 Jul 13
- Country of Publication:
- United States
- Language:
- English
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