skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Synthesis and characterization of LiZnP and LiZnAs semiconductor material

Journal Article · · Journal of Crystal Growth

Sponsoring Organization:
USDOE National Nuclear Security Administration (NNSA)
Grant/Contract Number:
FG52-08NA28766
OSTI ID:
1246390
Journal Information:
Journal of Crystal Growth, Journal Name: Journal of Crystal Growth Vol. 412 Journal Issue: C; ISSN 0022-0248
Publisher:
ElsevierCopyright Statement
Country of Publication:
Netherlands
Language:
English
Citation Metrics:
Cited by: 16 works
Citation information provided by
Web of Science

Similar Records

Device fabrication, characterization, and thermal neutron detection response of LiZnP and LiZnAs semiconductor devices
Journal Article · Sat Aug 20 00:00:00 EDT 2016 · Nuclear Instruments and Methods in Physics Research. Section A, Accelerators, Spectrometers, Detectors and Associated Equipment · OSTI ID:1246390

Bulk Crystal Growth, and High-Resolution X-ray Diffraction Results of LiZnAs Semiconductor Material
Journal Article · Thu Apr 06 00:00:00 EDT 2017 · Journal of Electronic Materials · OSTI ID:1246390

Bulk crystal growth, and high-resolution x-ray diffraction results of LiZnP semiconductor material
Journal Article · Mon Jun 01 00:00:00 EDT 2015 · Journal of Crystal Growth · OSTI ID:1246390

Related Subjects