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Title: Antiferromagnetic spin Seebeck effect.

Abstract

We report on the observation of the spin Seebeck effect in antiferromagnetic MnF2. A device scale on-chip heater is deposited on a bilayer of MnF2 (110) (30nm)/Pt (4 nm) grown by molecular beam epitaxy on a MgF2(110) substrate. Using Pt as a spin detector layer, it is possible to measure the thermally generated spin current from MnF2 through the inverse spin Hall effect. The low temperature (2–80 K) and high magnetic field (up to 140 kOe) regime is explored. A clear spin-flop transition corresponding to the sudden rotation of antiferromagnetic spins out of the easy axis is observed in the spin Seebeck signal when large magnetic fields (>9T) are applied parallel to the easy axis of the MnF2 thin film. When the magnetic field is applied perpendicular to the easy axis, the spin-flop transition is absent, as expected.

Authors:
; ; ; ; ; ; ; ;
Publication Date:
Research Org.:
Argonne National Lab. (ANL), Argonne, IL (United States)
Sponsoring Org.:
USDOE Office of Science - Office of Basic Energy Sciences - Materials Sciences and Engineering Division; National Science Foundation (NSF)
OSTI Identifier:
1245591
DOE Contract Number:  
AC02-06CH11357
Resource Type:
Journal Article
Resource Relation:
Journal Name: Physical Review Letters; Journal Volume: 116; Journal Issue: 9
Country of Publication:
United States
Language:
English

Citation Formats

Wu, Stephen M., Zhang, Wei, KC, Amit, Borisov, Pavel, Pearson, John E., Jiang, J. Samuel, Lederman, David, Hoffmann, Axel, and Bhattacharya, Anand. Antiferromagnetic spin Seebeck effect.. United States: N. p., 2016. Web. doi:10.1103/PhysRevLett.116.097204.
Wu, Stephen M., Zhang, Wei, KC, Amit, Borisov, Pavel, Pearson, John E., Jiang, J. Samuel, Lederman, David, Hoffmann, Axel, & Bhattacharya, Anand. Antiferromagnetic spin Seebeck effect.. United States. doi:10.1103/PhysRevLett.116.097204.
Wu, Stephen M., Zhang, Wei, KC, Amit, Borisov, Pavel, Pearson, John E., Jiang, J. Samuel, Lederman, David, Hoffmann, Axel, and Bhattacharya, Anand. Thu . "Antiferromagnetic spin Seebeck effect.". United States. doi:10.1103/PhysRevLett.116.097204.
@article{osti_1245591,
title = {Antiferromagnetic spin Seebeck effect.},
author = {Wu, Stephen M. and Zhang, Wei and KC, Amit and Borisov, Pavel and Pearson, John E. and Jiang, J. Samuel and Lederman, David and Hoffmann, Axel and Bhattacharya, Anand},
abstractNote = {We report on the observation of the spin Seebeck effect in antiferromagnetic MnF2. A device scale on-chip heater is deposited on a bilayer of MnF2 (110) (30nm)/Pt (4 nm) grown by molecular beam epitaxy on a MgF2(110) substrate. Using Pt as a spin detector layer, it is possible to measure the thermally generated spin current from MnF2 through the inverse spin Hall effect. The low temperature (2–80 K) and high magnetic field (up to 140 kOe) regime is explored. A clear spin-flop transition corresponding to the sudden rotation of antiferromagnetic spins out of the easy axis is observed in the spin Seebeck signal when large magnetic fields (>9T) are applied parallel to the easy axis of the MnF2 thin film. When the magnetic field is applied perpendicular to the easy axis, the spin-flop transition is absent, as expected.},
doi = {10.1103/PhysRevLett.116.097204},
journal = {Physical Review Letters},
number = 9,
volume = 116,
place = {United States},
year = {Thu Mar 03 00:00:00 EST 2016},
month = {Thu Mar 03 00:00:00 EST 2016}
}