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Title: Phase formation and texture of thin nickel germanides on Ge(001) and Ge(111)

Authors:
ORCiD logo [1];  [2];  [2];  [3];  [4];  [3];  [4];  [5];  [2];  [1]
  1. Department of Solid-State Sciences, Ghent University, Krijgslaan 281/S1, 9000 Ghent, Belgium
  2. Instituut voor Kern- en Stralingsfysica, KU Leuven, Celestijnenlaan 200 D, B-3001 Leuven, Belgium
  3. Electron Microscopy for Materials Research (EMAT), University of Antwerp, Groenenborgerlaan 171, B-2020 Antwerp, Belgium
  4. IBM T.J. Watson Research Center, Yorktown Heights, New York 10598, USA
  5. Department of Physics, University of Cape Town, Rondebosch 7700, South Africa
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1245504
Grant/Contract Number:  
AC02-98CH10886
Resource Type:
Journal Article: Publisher's Accepted Manuscript
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Name: Journal of Applied Physics Journal Volume: 119 Journal Issue: 13; Journal ID: ISSN 0021-8979
Publisher:
American Institute of Physics
Country of Publication:
United States
Language:
English

Citation Formats

De Schutter, B., Van Stiphout, K., Santos, N. M., Bladt, E., Jordan-Sweet, J., Bals, S., Lavoie, C., Comrie, C. M., Vantomme, A., and Detavernier, C. Phase formation and texture of thin nickel germanides on Ge(001) and Ge(111). United States: N. p., 2016. Web. doi:10.1063/1.4945317.
De Schutter, B., Van Stiphout, K., Santos, N. M., Bladt, E., Jordan-Sweet, J., Bals, S., Lavoie, C., Comrie, C. M., Vantomme, A., & Detavernier, C. Phase formation and texture of thin nickel germanides on Ge(001) and Ge(111). United States. doi:10.1063/1.4945317.
De Schutter, B., Van Stiphout, K., Santos, N. M., Bladt, E., Jordan-Sweet, J., Bals, S., Lavoie, C., Comrie, C. M., Vantomme, A., and Detavernier, C. Tue . "Phase formation and texture of thin nickel germanides on Ge(001) and Ge(111)". United States. doi:10.1063/1.4945317.
@article{osti_1245504,
title = {Phase formation and texture of thin nickel germanides on Ge(001) and Ge(111)},
author = {De Schutter, B. and Van Stiphout, K. and Santos, N. M. and Bladt, E. and Jordan-Sweet, J. and Bals, S. and Lavoie, C. and Comrie, C. M. and Vantomme, A. and Detavernier, C.},
abstractNote = {},
doi = {10.1063/1.4945317},
journal = {Journal of Applied Physics},
number = 13,
volume = 119,
place = {United States},
year = {Tue Apr 05 00:00:00 EDT 2016},
month = {Tue Apr 05 00:00:00 EDT 2016}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record at 10.1063/1.4945317

Citation Metrics:
Cited by: 4 works
Citation information provided by
Web of Science

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Works referenced in this record:

High-k/Ge MOSFETs for future nanoelectronics
journal, January 2008


Germanium MOSFET Devices: Advances in Materials Understanding, Process Development, and Electrical Performance
journal, May 2008

  • Brunco, D. P.; De Jaeger, B.; Eneman, G.
  • Journal of The Electrochemical Society, Vol. 155, Issue 7, p. H552-H561
  • DOI: 10.1149/1.2919115