Ultrafast and band-selective Auger recombination in InGaN quantum wells

Williams, Kristopher W.; Monahan, Nicholas R.; Koleske, Daniel D.; Crawford, Mary H.; Zhu, X. -Y.

doi:10.1063/1.4945669

Title: Ultrafast and band-selective Auger recombination in InGaN quantum wells

Journal Article · Tue Apr 05 00:00:00 EDT 2016 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4945669· OSTI ID:1370402

Williams, Kristopher W. ^[1];

^[1]; Koleske, Daniel D. ^[2]; Crawford, Mary H. ^[2]; Zhu, X. -Y. ^[1]

Columbia Univ., New York, NY (United States). Dept. of Chemistry
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

In InGaN quantum well based light-emitting diodes, Auger recombination is believed to limit the quantum efficiency at high injection currents. Here in this paper, we report the direct observation of carrier loss from Auger recombination on a sub-picosecond timescale in a single InGaN quantum well using time-resolved photoemission. Selective excitations of different valence sub-bands reveal that the Auger rate constant decreases by two orders of magnitude as the effective hole mass decreases, confirming the critical role of momentum conservation.

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Research Organization:: Energy Frontier Research Centers (EFRC) (United States). EFRC for Solid State Lighting Science (SSLS)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: AC04-94AL85000

OSTI ID:: 1370402

Alternate ID(s):: OSTI ID: 1245500

Journal Information:: Applied Physics Letters, Vol. 108, Issue 14; Related Information: SSLS partners with Sandia National Laboratories (lead); California Institute of Technology; University of California, Irvine, Merced, and Santa Barbara; Los Alamos National Laboratory; University of New Mexico; Northwestern University; Philips Lumileds Lighting; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 15 works

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References (21)

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Temperature-dependent recombination coefficients in InGaN light-emitting diodes: Hole localization, Auger processes, and the green gap Nippert, Felix; Karpov, Sergey Yu.; Callsen, Gordon Applied Physics Letters, Vol. 109, Issue 16 https://doi.org/10.1063/1.4965298	journal	October 2016
Photoinduced entropy of InGaN/GaN p-i-n double-heterostructure nanowires Alfaraj, Nasir; Mitra, Somak; Wu, Feng Applied Physics Letters, Vol. 110, Issue 16 https://doi.org/10.1063/1.4981252	journal	April 2017
The ABC model of recombination reinterpreted: Impact on understanding carrier transport and efficiency droop in InGaN/GaN light emitting diodes Hopkins, M. A.; Allsopp, D. W. E.; Kappers, M. J. Journal of Applied Physics, Vol. 122, Issue 23 https://doi.org/10.1063/1.4986434	journal	December 2017
A comparative study of photoluminescence internal quantum efficiency determination method in InGaN/GaN multi-quantum-wells Xing, Yuchen; Wang, Lai; Wang, Zilan Journal of Applied Physics, Vol. 122, Issue 13 https://doi.org/10.1063/1.5005619	journal	October 2017
Ultrafast bulk carrier dynamics in various GaN crystals at near-infrared wavelengths under one- and two-photon absorption Fang, Yu; Yang, Junyi; Xiao, Zhengguo Applied Physics Letters, Vol. 114, Issue 11 https://doi.org/10.1063/1.5089108	journal	March 2019
The ABC model of recombination reinterpreted: Impact on understanding carrier transport and efficiency droop in InGaN/GaN light emitting diodes Hopkins, Ma; Allsopp, Dwe; Kappers, Menno Apollo - University of Cambridge Repository https://doi.org/10.17863/cam.20819	text	January 2017

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