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Title: Ultrafast and band-selective Auger recombination in InGaN quantum wells

Authors:
 [1]; ORCiD logo [1];  [2];  [2];  [1]
  1. Department of Chemistry, Columbia University, New York, New York 10027, USA
  2. Sandia National Laboratories, Albuquerque, New Mexico 87123, USA
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1245500
Grant/Contract Number:  
AC04-94AL85000
Resource Type:
Journal Article: Publisher's Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Name: Applied Physics Letters Journal Volume: 108 Journal Issue: 14; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics
Country of Publication:
United States
Language:
English

Citation Formats

Williams, Kristopher W., Monahan, Nicholas R., Koleske, Daniel D., Crawford, Mary H., and Zhu, X. -Y. Ultrafast and band-selective Auger recombination in InGaN quantum wells. United States: N. p., 2016. Web. doi:10.1063/1.4945669.
Williams, Kristopher W., Monahan, Nicholas R., Koleske, Daniel D., Crawford, Mary H., & Zhu, X. -Y. Ultrafast and band-selective Auger recombination in InGaN quantum wells. United States. doi:10.1063/1.4945669.
Williams, Kristopher W., Monahan, Nicholas R., Koleske, Daniel D., Crawford, Mary H., and Zhu, X. -Y. Tue . "Ultrafast and band-selective Auger recombination in InGaN quantum wells". United States. doi:10.1063/1.4945669.
@article{osti_1245500,
title = {Ultrafast and band-selective Auger recombination in InGaN quantum wells},
author = {Williams, Kristopher W. and Monahan, Nicholas R. and Koleske, Daniel D. and Crawford, Mary H. and Zhu, X. -Y.},
abstractNote = {},
doi = {10.1063/1.4945669},
journal = {Applied Physics Letters},
number = 14,
volume = 108,
place = {United States},
year = {Tue Apr 05 00:00:00 EDT 2016},
month = {Tue Apr 05 00:00:00 EDT 2016}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record at 10.1063/1.4945669

Citation Metrics:
Cited by: 6 works
Citation information provided by
Web of Science

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Works referenced in this record:

Efficiency droop in nitride-based light-emitting diodes
journal, July 2010