Gallium vacancy complexes as a cause of Shockley-Read-Hall recombination in III-nitride light emitters

Dreyer, Cyrus E.; Alkauskas, Audrius; Lyons, John L.; Speck, James S.; Van de Walle, Chris G.

doi:10.1063/1.4942674

Title: Gallium vacancy complexes as a cause of Shockley-Read-Hall recombination in III-nitride light emitters

Journal Article · Mon Apr 04 00:00:00 EDT 2016 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4942674· OSTI ID:1470095

Dreyer, Cyrus E. ^[1]; Alkauskas, Audrius ^[2];

^[1]; Speck, James S. ^[1];

^[1]

Univ. of California, Santa Barbara, CA (United States). Materials Dept.
Center for Physical Sciences and Technology (FTMC), Vilnius (Lithuania); Kaunas Univ. of Technology (Lithuania). Dept. of Physics

In this paper, we describe a mechanism by which complexes between gallium vacancies and oxygen and/or hydrogen act as efficient channels for nonradiative recombination in InGaN alloys. Our identification is based on first-principles calculations of defect formation energies, charge-state transition levels, and nonradiative capture coefficients for electrons and holes. The dependence of these quantities on alloy composition is analyzed. We find that modest concentrations of the proposed defect complexes (~10¹⁶ cm^-3) can give rise to Shockley-Read-Hall coefficients $A = (10^{7} - 10^{9})$ s^-1. Finally, the resulting nonradiative recombination would significantly reduce the internal quantum efficiency of optoelectronic devices.

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Research Organization:: Univ. of California, Santa Barbara, CA (United States); Center for Physical Sciences and Technology (FTMC), Vilnius (Lithuania); Kaunas Univ. of Technology (Lithuania)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES); European Union (EU)

Grant/Contract Number:: SC0010689; AC02-05CH11231; 657054

OSTI ID:: 1470095

Alternate ID(s):: OSTI ID: 1245489

Journal Information:: Applied Physics Letters, Vol. 108, Issue 14; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 77 works

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Title: Gallium vacancy complexes as a cause of Shockley-Read-Hall recombination in III-nitride light emitters

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