Spin Hall magnetoresistance in CoFe₂O₄/Pt films

Journal Article · Wed May 13 00:00:00 EDT 2015 · IEEE Transactions on Magnetics

DOI:https://doi.org/10.1109/TMAG.2015.2433060· OSTI ID:1245136

Wu, Hao ^[1]; Qintong, Zhang ^[1]; Caihua, Wan ^[1]; Ali, Syed Shahbaz ^[1]; Yuan, Zhonghui ^[1]; You, Lu ^[2]; Wang, Junling ^[2]; Choi, Yongseong ^[3]; Han, Xiufeng ^[1]

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1. Chinese Academy of Sciences, Beijing (China)
2. Nanyang Technological Univ., Singapore (Singapore)
3. Argonne National Lab. (ANL), Argonne, IL (United States)

Pulse laser deposition and magnetron sputtering techniques have been employed to prepare MgO(001)//CoFe₂O₄/Pt samples. Cross section transmission electron microscope results prove that the CoFe₂O₄ film epitaxially grew along (001) direction. X-ray magnetic circular dichroism results show that magnetic proximity effect in this sample is negligible. Magnetoresistance (MR) properties confirm that spin Hall MR (SMR) dominates in this system. Spin Hall effect-induced anomalous Hall voltage was also observed in this sample. Lastly, these results not only demonstrate the universality of SMR effect but also demonstrate the utility in spintronics of CoFe₂O₄ as a new type of magnetic insulator.

• Research Organization: Argonne National Lab. (ANL), Argonne, IL (United States)
• Sponsoring Organization: USDOE Office of Science (SC)
• Grant/Contract Number: AC02-06CH11357
• OSTI ID: 1245136
• Journal Information: IEEE Transactions on Magnetics, Vol. 51, Issue 11; ISSN 0018-9464
• Publisher: Institute of Electrical and Electronics Engineers. Magnetics Group
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
Spin Hall magnetoresistance
X-ray magnetic circular dichroism
anomalous Hall effect
ferrimagnetic insulator