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Title: Electronic and mechanical properties of graphene-germanium interfaces grown by chemical vapor deposition

Abstract

Epitaxially oriented wafer-scale graphene grown directly on semiconducting Ge substrates is of high interest for both fundamental science and electronic device applications. To date, however, this material system remains relatively unexplored structurally and electronically, particularly at the atomic scale. To further understand the nature of the interface between graphene and Ge, we utilize ultrahigh vacuum scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS) along with Raman and X-ray photoelectron spectroscopy to probe interfacial atomic structure and chemistry. STS reveals significant differences in electronic interactions between graphene and Ge(110)/Ge(111), which is consistent with a model of stronger interaction on Ge(110) leading to epitaxial growth. Raman spectra indicate that the graphene is considerably strained after growth, with more point-to-point variation on Ge(111). Furthermore, this native strain influences the atomic structure of the interface by inducing metastable and previously unobserved Ge surface reconstructions following annealing. These nonequilibrium reconstructions cover >90% of the surface and, in turn, modify both the electronic and mechanical properties of the graphene overlayer. Finally, graphene on Ge(001) represents the extreme strain case, where graphene drives the reorganization of the Ge surface into [107] facets. From this study, it is clear that the interaction between graphene and the underlyingmore » Ge is not only dependent on the substrate crystallographic orientation, but is also tunable and strongly related to the atomic reconfiguration of the graphene–Ge interface.« less

Authors:
 [1];  [2];  [1];  [3];  [3];  [2];  [3];  [4]
  1. Northwestern Univ., Evanston, IL (United States); Argonne National Lab. (ANL), Argonne, IL (United States)
  2. Univ. of Wisconsin, Madison, WI (United States)
  3. Northwestern Univ., Evanston, IL (United States)
  4. Argonne National Lab. (ANL), Argonne, IL (United States)
Publication Date:
Research Org.:
Argonne National Lab. (ANL), Argonne, IL (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
OSTI Identifier:
1245135
Grant/Contract Number:  
AC02-06CH11357
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
Nano Letters
Additional Journal Information:
Journal Volume: 15; Journal Issue: 11; Journal ID: ISSN 1530-6984
Publisher:
American Chemical Society
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; Raman spectroscopy; chemical vapor deposition; epitaxy; scanning tunneling microscopy; scanning tunneling spectroscopy; surface reconstruction

Citation Formats

Kiraly, Brian T., Jacobberger, Robert M., Mannix, Andrew J., Campbell, Gavin P., Bedzyk, Michael J., Arnold, Michael S., Hersam, Mark C., and Guisinger, Nathan P. Electronic and mechanical properties of graphene-germanium interfaces grown by chemical vapor deposition. United States: N. p., 2015. Web. doi:10.1021/acs.nanolett.5b02833.
Kiraly, Brian T., Jacobberger, Robert M., Mannix, Andrew J., Campbell, Gavin P., Bedzyk, Michael J., Arnold, Michael S., Hersam, Mark C., & Guisinger, Nathan P. Electronic and mechanical properties of graphene-germanium interfaces grown by chemical vapor deposition. United States. doi:10.1021/acs.nanolett.5b02833.
Kiraly, Brian T., Jacobberger, Robert M., Mannix, Andrew J., Campbell, Gavin P., Bedzyk, Michael J., Arnold, Michael S., Hersam, Mark C., and Guisinger, Nathan P. Tue . "Electronic and mechanical properties of graphene-germanium interfaces grown by chemical vapor deposition". United States. doi:10.1021/acs.nanolett.5b02833. https://www.osti.gov/servlets/purl/1245135.
@article{osti_1245135,
title = {Electronic and mechanical properties of graphene-germanium interfaces grown by chemical vapor deposition},
author = {Kiraly, Brian T. and Jacobberger, Robert M. and Mannix, Andrew J. and Campbell, Gavin P. and Bedzyk, Michael J. and Arnold, Michael S. and Hersam, Mark C. and Guisinger, Nathan P.},
abstractNote = {Epitaxially oriented wafer-scale graphene grown directly on semiconducting Ge substrates is of high interest for both fundamental science and electronic device applications. To date, however, this material system remains relatively unexplored structurally and electronically, particularly at the atomic scale. To further understand the nature of the interface between graphene and Ge, we utilize ultrahigh vacuum scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS) along with Raman and X-ray photoelectron spectroscopy to probe interfacial atomic structure and chemistry. STS reveals significant differences in electronic interactions between graphene and Ge(110)/Ge(111), which is consistent with a model of stronger interaction on Ge(110) leading to epitaxial growth. Raman spectra indicate that the graphene is considerably strained after growth, with more point-to-point variation on Ge(111). Furthermore, this native strain influences the atomic structure of the interface by inducing metastable and previously unobserved Ge surface reconstructions following annealing. These nonequilibrium reconstructions cover >90% of the surface and, in turn, modify both the electronic and mechanical properties of the graphene overlayer. Finally, graphene on Ge(001) represents the extreme strain case, where graphene drives the reorganization of the Ge surface into [107] facets. From this study, it is clear that the interaction between graphene and the underlying Ge is not only dependent on the substrate crystallographic orientation, but is also tunable and strongly related to the atomic reconfiguration of the graphene–Ge interface.},
doi = {10.1021/acs.nanolett.5b02833},
journal = {Nano Letters},
issn = {1530-6984},
number = 11,
volume = 15,
place = {United States},
year = {2015},
month = {10}
}

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Cited by: 18 works
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Works referencing / citing this record:

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