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Title: Semiconductor neutron detectors using depleted uranium oxide

Abstract

This paper reports on recent attempts to develop and test a new type of solid-state neutron detector fabricated from uranium compounds. It has been known for many years that uranium oxide (UO2), triuranium octoxide (U3O8) and other uranium compounds exhibit semiconducting characteristics with a broad range of electrical properties. We seek to exploit these characteristics to make a direct-conversion semiconductor neutron detector. In such a device a neutron interacts with a uranium nucleus, inducing ssion. The ssion products deposit energy-producing, detectable electron-hole pairs. The high energy released in the ssion reaction indicates that noise discrimination in such a device has the potential to be excellent. Schottky devices were fabricated using a chemical deposition coating technique to deposit UO2 layers a few microns thick on a sapphire substrate. Schottky devices have also been made using a single crystal from UO2 samples approximately 500 microns thick. Neutron sensitivity simulations have been performed using GEANT4. Neutron sensitivity for the Schottky devices was tested experimentally using a 252Cf source.

Authors:
; ; ; ; ; ; ; ; ; ;
Publication Date:
Research Org.:
Nevada Test Site/National Security Technologies, LLC (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA), Office of Defense Programs (DP) (NA-10)
OSTI Identifier:
1244991
Report Number(s):
DOE/NV/25946{2162
Journal ID: ISSN 0277-786X
DOE Contract Number:  
AC52-06NA25946
Resource Type:
Conference
Journal Name:
Proceedings of SPIE - The International Society for Optical Engineering
Additional Journal Information:
Journal Volume: 9213; Conference: SPIE Conference on Radiation Detectors: Systems and Applications XV, Conference 9215 , San Diego, CA (United States), 19-20 Aug 2014; Journal ID: ISSN 0277-786X
Publisher:
SPIE
Country of Publication:
United States
Language:
English
Subject:
neutron detection, uranium oxide, semiconductor

Citation Formats

Burger, Arnold, Franks, Larry, James, Ralph B., Fiederle, Michael, Kruschwitz, Craig A., Mukhopadhyay, Sanjoy, Schwellenbach, David, Meek, Thomas, Shaver, Brandon, Cunningham, Taylor, and Auxier, Jerrad Philip. Semiconductor neutron detectors using depleted uranium oxide. United States: N. p., 2014. Web. doi:10.1117/12.2063501.
Burger, Arnold, Franks, Larry, James, Ralph B., Fiederle, Michael, Kruschwitz, Craig A., Mukhopadhyay, Sanjoy, Schwellenbach, David, Meek, Thomas, Shaver, Brandon, Cunningham, Taylor, & Auxier, Jerrad Philip. Semiconductor neutron detectors using depleted uranium oxide. United States. doi:10.1117/12.2063501.
Burger, Arnold, Franks, Larry, James, Ralph B., Fiederle, Michael, Kruschwitz, Craig A., Mukhopadhyay, Sanjoy, Schwellenbach, David, Meek, Thomas, Shaver, Brandon, Cunningham, Taylor, and Auxier, Jerrad Philip. Fri . "Semiconductor neutron detectors using depleted uranium oxide". United States. doi:10.1117/12.2063501. https://www.osti.gov/servlets/purl/1244991.
@article{osti_1244991,
title = {Semiconductor neutron detectors using depleted uranium oxide},
author = {Burger, Arnold and Franks, Larry and James, Ralph B. and Fiederle, Michael and Kruschwitz, Craig A. and Mukhopadhyay, Sanjoy and Schwellenbach, David and Meek, Thomas and Shaver, Brandon and Cunningham, Taylor and Auxier, Jerrad Philip},
abstractNote = {This paper reports on recent attempts to develop and test a new type of solid-state neutron detector fabricated from uranium compounds. It has been known for many years that uranium oxide (UO2), triuranium octoxide (U3O8) and other uranium compounds exhibit semiconducting characteristics with a broad range of electrical properties. We seek to exploit these characteristics to make a direct-conversion semiconductor neutron detector. In such a device a neutron interacts with a uranium nucleus, inducing ssion. The ssion products deposit energy-producing, detectable electron-hole pairs. The high energy released in the ssion reaction indicates that noise discrimination in such a device has the potential to be excellent. Schottky devices were fabricated using a chemical deposition coating technique to deposit UO2 layers a few microns thick on a sapphire substrate. Schottky devices have also been made using a single crystal from UO2 samples approximately 500 microns thick. Neutron sensitivity simulations have been performed using GEANT4. Neutron sensitivity for the Schottky devices was tested experimentally using a 252Cf source.},
doi = {10.1117/12.2063501},
journal = {Proceedings of SPIE - The International Society for Optical Engineering},
issn = {0277-786X},
number = ,
volume = 9213,
place = {United States},
year = {2014},
month = {9}
}

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