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Title: Growth and Band Offsets of Epitaxial Lanthanide Oxides on GaN and AlGaN.

Abstract

Abstract not provided.

Authors:
; ; ; ;
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE Office of Electricity Delivery and Energy Reliability (OE)
OSTI Identifier:
1244879
Report Number(s):
SAND2015-0073C
558329
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Conference
Resource Relation:
Conference: Proposed for presentation at the Electronic Materials and Applications 2015 held January 21-23, 2015 in Orlando, FL.
Country of Publication:
United States
Language:
English

Citation Formats

Ihlefeld, Jon, Brumbach, Michael T., Allerman, Andrew A., Wheeler, David Roger, and Atcitty, Stanley. Growth and Band Offsets of Epitaxial Lanthanide Oxides on GaN and AlGaN.. United States: N. p., 2015. Web.
Ihlefeld, Jon, Brumbach, Michael T., Allerman, Andrew A., Wheeler, David Roger, & Atcitty, Stanley. Growth and Band Offsets of Epitaxial Lanthanide Oxides on GaN and AlGaN.. United States.
Ihlefeld, Jon, Brumbach, Michael T., Allerman, Andrew A., Wheeler, David Roger, and Atcitty, Stanley. Thu . "Growth and Band Offsets of Epitaxial Lanthanide Oxides on GaN and AlGaN.". United States. doi:. https://www.osti.gov/servlets/purl/1244879.
@article{osti_1244879,
title = {Growth and Band Offsets of Epitaxial Lanthanide Oxides on GaN and AlGaN.},
author = {Ihlefeld, Jon and Brumbach, Michael T. and Allerman, Andrew A. and Wheeler, David Roger and Atcitty, Stanley},
abstractNote = {Abstract not provided.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Thu Jan 01 00:00:00 EST 2015},
month = {Thu Jan 01 00:00:00 EST 2015}
}

Conference:
Other availability
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