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Title: Radiation-Induced Resistance Changes in Resistive Memory: Separating Displacement Damage and Ionization and Mapping Sensitive Areas.

Abstract

Abstract not provided.

Authors:
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1244464
Report Number(s):
SAND2015-2079PE
569654
DOE Contract Number:
AC04-94AL85000
Resource Type:
Conference
Resource Relation:
Conference: Proposed for presentation at the Job interview held March 19, 2015 in Cambridge, MA, United States.
Country of Publication:
United States
Language:
English

Citation Formats

Hughart, David Russell. Radiation-Induced Resistance Changes in Resistive Memory: Separating Displacement Damage and Ionization and Mapping Sensitive Areas.. United States: N. p., 2015. Web.
Hughart, David Russell. Radiation-Induced Resistance Changes in Resistive Memory: Separating Displacement Damage and Ionization and Mapping Sensitive Areas.. United States.
Hughart, David Russell. Sun . "Radiation-Induced Resistance Changes in Resistive Memory: Separating Displacement Damage and Ionization and Mapping Sensitive Areas.". United States. doi:. https://www.osti.gov/servlets/purl/1244464.
@article{osti_1244464,
title = {Radiation-Induced Resistance Changes in Resistive Memory: Separating Displacement Damage and Ionization and Mapping Sensitive Areas.},
author = {Hughart, David Russell},
abstractNote = {Abstract not provided.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Sun Mar 01 00:00:00 EST 2015},
month = {Sun Mar 01 00:00:00 EST 2015}
}

Conference:
Other availability
Please see Document Availability for additional information on obtaining the full-text document. Library patrons may search WorldCat to identify libraries that hold this conference proceeding.

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