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Title: Epitaxial growth of CZT(S,Se) on silicon

Abstract

Techniques for epitaxial growth of CZT(S,Se) materials on Si are provided. In one aspect, a method of forming an epitaxial kesterite material is provided which includes the steps of: selecting a Si substrate based on a crystallographic orientation of the Si substrate; forming an epitaxial oxide interlayer on the Si substrate to enhance wettability of the epitaxial kesterite material on the Si substrate, wherein the epitaxial oxide interlayer is formed from a material that is lattice-matched to Si; and forming the epitaxial kesterite material on a side of the epitaxial oxide interlayer opposite the Si substrate, wherein the epitaxial kesterite material includes Cu, Zn, Sn, and at least one of S and Se, and wherein a crystallographic orientation of the epitaxial kesterite material is based on the crystallographic orientation of the Si substrate. A method of forming an epitaxial kesterite-based photovoltaic device and an epitaxial kesterite-based device are also provided.

Inventors:
; ; ; ;
Publication Date:
Research Org.:
International Business Machines Corporation, Armonk, NY (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1243034
Patent Number(s):
9,287,426
Application Number:
14/499,788
Assignee:
International Business Machines Corporation (Armonk, NY) DOEEE
DOE Contract Number:  
EE0006334
Resource Type:
Patent
Resource Relation:
Patent File Date: 2014 Sep 29
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 14 SOLAR ENERGY

Citation Formats

Bojarczuk, Nestor A., Gershon, Talia S., Guha, Supratik, Shin, Byungha, and Zhu, Yu. Epitaxial growth of CZT(S,Se) on silicon. United States: N. p., 2016. Web.
Bojarczuk, Nestor A., Gershon, Talia S., Guha, Supratik, Shin, Byungha, & Zhu, Yu. Epitaxial growth of CZT(S,Se) on silicon. United States.
Bojarczuk, Nestor A., Gershon, Talia S., Guha, Supratik, Shin, Byungha, and Zhu, Yu. Tue . "Epitaxial growth of CZT(S,Se) on silicon". United States. doi:. https://www.osti.gov/servlets/purl/1243034.
@article{osti_1243034,
title = {Epitaxial growth of CZT(S,Se) on silicon},
author = {Bojarczuk, Nestor A. and Gershon, Talia S. and Guha, Supratik and Shin, Byungha and Zhu, Yu},
abstractNote = {Techniques for epitaxial growth of CZT(S,Se) materials on Si are provided. In one aspect, a method of forming an epitaxial kesterite material is provided which includes the steps of: selecting a Si substrate based on a crystallographic orientation of the Si substrate; forming an epitaxial oxide interlayer on the Si substrate to enhance wettability of the epitaxial kesterite material on the Si substrate, wherein the epitaxial oxide interlayer is formed from a material that is lattice-matched to Si; and forming the epitaxial kesterite material on a side of the epitaxial oxide interlayer opposite the Si substrate, wherein the epitaxial kesterite material includes Cu, Zn, Sn, and at least one of S and Se, and wherein a crystallographic orientation of the epitaxial kesterite material is based on the crystallographic orientation of the Si substrate. A method of forming an epitaxial kesterite-based photovoltaic device and an epitaxial kesterite-based device are also provided.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Mar 15 00:00:00 EDT 2016},
month = {Tue Mar 15 00:00:00 EDT 2016}
}

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Works referenced in this record:

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journal, June 2011

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