Relaxed Si{sub 0.7}Ge{sub 0.3} buffer layers for high-mobility devices

Journal Article · Mon Oct 16 00:00:00 EDT 1995 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.114349· OSTI ID:124238

Mooney, P M; Jordan-Sweet, J L; Ismail, K; Chu, J O; Feenstra, R M; LeGoues, F K ^[1]

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1. IBM Research Division, T. J. Watson Research Center, P.O. Box 218, Yorktown Heights, New York 10598 (United States)

The minimum epitaxial layer thickness required to produce relaxed, thermally stable, Si{sub 0.7}Ge{sub 0.3} buffer layer structures for high electron- and hole-mobility devices has been determined, using high resolution x-ray diffraction. A 1.4-{mu}m-thick layer, step graded to {ital x}=0.35, is sufficiently thick so that the residual strain in a uniform composition Si{sub 0.33}Ge{sub 0.67} layer grown on top of it is essentially independent of thickness or growth temperature of the layer. Such structures are stable when annealed at 750 {degree}C. {copyright} {ital 1995} {ital American} {ital Institute} {ital of} {ital Physics}.

• Research Organization: Brookhaven National Lab. (BNL), Upton, NY (United States)
• DOE Contract Number: AC02-76CH00016
• OSTI ID: 124238
• Journal Information: Applied Physics Letters, Vol. 67, Issue 16; Other Information: PBD: 16 Oct 1995
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
GERMANIUM SILICIDES
EPITAXY
ANNEALING
CARRIER MOBILITY
CHEMICAL VAPOR DEPOSITION
RELAXATION
STRAINS
THICKNESS
X-RAY DIFFRACTION