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Title: Band-Gap Engineering at a Semiconductor-Crystalline Oxide Interface

Abstract

The epitaxial growth of crystalline oxides on semiconductors provides a pathway to introduce new functionalities to semiconductor devices. Key to electrically coupling crystalline oxides with semiconductors to realize functional behavior is controlling the manner in which their bands align at interfaces. Here we apply principles of band gap engineering traditionally used at heterojunctions between conventional semiconductors to control the band offset between a single crystalline oxide and a semiconductor. Reactive molecular beam epitaxy is used to realize atomically abrupt and structurally coherent interfaces between SrZr xTi 1-xO 3 and Ge, in which the band gap of the former is enhanced with Zr content x. We present structural, electrical and photoemission characterization of SrZr xTi 1-xO 33-Ge heterojunctions for x = 0.2 to 0.75 and demonstrate the band offset can be tuned from type-II to type-I. The type-I band offset provides a platform to integrate the dielectric, ferroelectric and ferromagnetic functionalities of oxides with semiconducting devices.

Authors:
 [1];  [1];  [2];  [3];  [3];  [1];  [4];  [3];  [1]
  1. Univ. of Texas, Arlington, TX (United States)
  2. Brookhaven National Lab. (BNL), Upton, NY (United States); Nanjing Univ. (China)
  3. Pacific Northwest National Lab. (PNNL), Richland, WA (United States)
  4. Brookhaven National Lab. (BNL), Upton, NY (United States)
Publication Date:
Research Org.:
Pacific Northwest National Lab. (PNNL), Richland, WA (United States). Environmental Molecular Sciences Lab. (EMSL)
Sponsoring Org.:
USDOE
OSTI Identifier:
1242346
Report Number(s):
PNNL-SA-106514
Journal ID: ISSN 2196-7350; 48341; KC0203020
DOE Contract Number:  
AC05-76RL01830
Resource Type:
Journal Article
Resource Relation:
Journal Name: Advanced Materials Interfaces; Journal Volume: 2; Journal Issue: 4
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING; N00784; Band-gap engineering; Environmental Molecular Sciences Laboratory

Citation Formats

Moghadam, Mohammadreza J., Ahmadi-Majlan, K., Shen, Xuan, Droubay, Timothy C., Bowden, Mark E., Chrysler, M., Su, Dong, Chambers, Scott A., and Ngai, Joseph. Band-Gap Engineering at a Semiconductor-Crystalline Oxide Interface. United States: N. p., 2015. Web. doi:10.1002/admi.201400497.
Moghadam, Mohammadreza J., Ahmadi-Majlan, K., Shen, Xuan, Droubay, Timothy C., Bowden, Mark E., Chrysler, M., Su, Dong, Chambers, Scott A., & Ngai, Joseph. Band-Gap Engineering at a Semiconductor-Crystalline Oxide Interface. United States. doi:10.1002/admi.201400497.
Moghadam, Mohammadreza J., Ahmadi-Majlan, K., Shen, Xuan, Droubay, Timothy C., Bowden, Mark E., Chrysler, M., Su, Dong, Chambers, Scott A., and Ngai, Joseph. Mon . "Band-Gap Engineering at a Semiconductor-Crystalline Oxide Interface". United States. doi:10.1002/admi.201400497.
@article{osti_1242346,
title = {Band-Gap Engineering at a Semiconductor-Crystalline Oxide Interface},
author = {Moghadam, Mohammadreza J. and Ahmadi-Majlan, K. and Shen, Xuan and Droubay, Timothy C. and Bowden, Mark E. and Chrysler, M. and Su, Dong and Chambers, Scott A. and Ngai, Joseph},
abstractNote = {The epitaxial growth of crystalline oxides on semiconductors provides a pathway to introduce new functionalities to semiconductor devices. Key to electrically coupling crystalline oxides with semiconductors to realize functional behavior is controlling the manner in which their bands align at interfaces. Here we apply principles of band gap engineering traditionally used at heterojunctions between conventional semiconductors to control the band offset between a single crystalline oxide and a semiconductor. Reactive molecular beam epitaxy is used to realize atomically abrupt and structurally coherent interfaces between SrZrxTi1-xO3 and Ge, in which the band gap of the former is enhanced with Zr content x. We present structural, electrical and photoemission characterization of SrZrxTi1-xO33-Ge heterojunctions for x = 0.2 to 0.75 and demonstrate the band offset can be tuned from type-II to type-I. The type-I band offset provides a platform to integrate the dielectric, ferroelectric and ferromagnetic functionalities of oxides with semiconducting devices.},
doi = {10.1002/admi.201400497},
journal = {Advanced Materials Interfaces},
number = 4,
volume = 2,
place = {United States},
year = {Mon Feb 09 00:00:00 EST 2015},
month = {Mon Feb 09 00:00:00 EST 2015}
}