Band-Gap Engineering at a Semiconductor-Crystalline Oxide Interface

Moghadam, Mohammadreza J.; Ahmadi-Majlan, K.; Shen, Xuan; Droubay, Timothy C.; Bowden, Mark E.; Chrysler, M.; Su, Dong; Chambers, Scott A.; Ngai, Joseph

doi:10.1002/admi.201400497

Title: Band-Gap Engineering at a Semiconductor-Crystalline Oxide Interface

Journal Article · Mon Feb 09 00:00:00 EST 2015 · Advanced Materials Interfaces

DOI:https://doi.org/10.1002/admi.201400497· OSTI ID:1242346

Moghadam, Mohammadreza J. ^[1]; Ahmadi-Majlan, K. ^[1]; Shen, Xuan ^[2]; Droubay, Timothy C. ^[3]; Bowden, Mark E. ^[3]; Chrysler, M. ^[1]; Su, Dong ^[4]; Chambers, Scott A. ^[3]; Ngai, Joseph ^[1]

Univ. of Texas, Arlington, TX (United States)
Brookhaven National Lab. (BNL), Upton, NY (United States); Nanjing Univ. (China)
Pacific Northwest National Lab. (PNNL), Richland, WA (United States)
Brookhaven National Lab. (BNL), Upton, NY (United States)

The epitaxial growth of crystalline oxides on semiconductors provides a pathway to introduce new functionalities to semiconductor devices. Key to electrically coupling crystalline oxides with semiconductors to realize functional behavior is controlling the manner in which their bands align at interfaces. Here we apply principles of band gap engineering traditionally used at heterojunctions between conventional semiconductors to control the band offset between a single crystalline oxide and a semiconductor. Reactive molecular beam epitaxy is used to realize atomically abrupt and structurally coherent interfaces between SrZr_xTi_1-xO₃ and Ge, in which the band gap of the former is enhanced with Zr content x. We present structural, electrical and photoemission characterization of SrZr_xTi_1-xO₃3-Ge heterojunctions for x = 0.2 to 0.75 and demonstrate the band offset can be tuned from type-II to type-I. The type-I band offset provides a platform to integrate the dielectric, ferroelectric and ferromagnetic functionalities of oxides with semiconducting devices.

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Research Organization:: Pacific Northwest National Lab. (PNNL), Richland, WA (United States). Environmental Molecular Sciences Lab. (EMSL)

Sponsoring Organization:: USDOE

DOE Contract Number:: AC05-76RL01830

OSTI ID:: 1242346

Report Number(s):: PNNL-SA-106514; 48341; KC0203020

Journal Information:: Advanced Materials Interfaces, Vol. 2, Issue 4; ISSN 2196-7350

Publisher:: Wiley-VCH

Country of Publication:: United States

Language:: English

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Combinatorial In Situ Photoelectron Spectroscopy Investigation of Sb ₂ Se ₃ /ZnS Heterointerfaces Siol, Sebastian; Schulz, Philip; Young, Matthew Advanced Materials Interfaces, Vol. 3, Issue 24 https://doi.org/10.1002/admi.201600755	journal	November 2016
Crystalline SrZrO ₃ deposition on Ge (001) by atomic layer deposition for high- k dielectric applications Hu, Shen; Ji, Li; Chen, Pei-Yu Journal of Applied Physics, Vol. 124, Issue 4 https://doi.org/10.1063/1.5026790	journal	July 2018
Interfacial structure of SrZr _x Ti ₁₋ _x O ₃ films on Ge Chen, Tongjie; Ahmadi-Majlan, Kamyar; Lim, Zheng Hui Applied Physics Letters, Vol. 113, Issue 20 https://doi.org/10.1063/1.5046394	journal	November 2018
Chemical and electronic structure analysis of a SrTiO3 (001)/p-Ge (001) hydrogen evolution photocathode Stoerzinger, Kelsey A.; Du, Yingge; Spurgeon, Steven R. MRS Communications, Vol. 8, Issue 02 https://doi.org/10.1557/mrc.2018.38	journal	March 2018
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