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Title: Investigation of Quantum Dot?Quantum Dot Coupling at High Hydrostatic Pressure.

Abstract

Abstract not provided.

Authors:
; ; ; ; ; ;
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1241660
Report Number(s):
SAND2014-17977C
537696
DOE Contract Number:
AC04-94AL85000
Resource Type:
Conference
Resource Relation:
Conference: Proposed for presentation at the CLEO held June 9-13, 2014 in San Jose, Ca.
Country of Publication:
United States
Language:
English

Citation Formats

Brener, Igal, Liu, Sheng, Fan, Hongyou, Luk, Ting S., Li, Binsong, Prasankumar, Rohit, and Sinclair, Michael B.. Investigation of Quantum Dot?Quantum Dot Coupling at High Hydrostatic Pressure.. United States: N. p., 2014. Web.
Brener, Igal, Liu, Sheng, Fan, Hongyou, Luk, Ting S., Li, Binsong, Prasankumar, Rohit, & Sinclair, Michael B.. Investigation of Quantum Dot?Quantum Dot Coupling at High Hydrostatic Pressure.. United States.
Brener, Igal, Liu, Sheng, Fan, Hongyou, Luk, Ting S., Li, Binsong, Prasankumar, Rohit, and Sinclair, Michael B.. Mon . "Investigation of Quantum Dot?Quantum Dot Coupling at High Hydrostatic Pressure.". United States. doi:. https://www.osti.gov/servlets/purl/1241660.
@article{osti_1241660,
title = {Investigation of Quantum Dot?Quantum Dot Coupling at High Hydrostatic Pressure.},
author = {Brener, Igal and Liu, Sheng and Fan, Hongyou and Luk, Ting S. and Li, Binsong and Prasankumar, Rohit and Sinclair, Michael B.},
abstractNote = {Abstract not provided.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Mon Sep 01 00:00:00 EDT 2014},
month = {Mon Sep 01 00:00:00 EDT 2014}
}

Conference:
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  • We propose an approach to tune the emission of a single semiconductor quantum dot (QD) to couple with a planar cavity using hydrostatic pressure without inducing temperature variation during the process of measurement. Based on this approach, we studied the influence of cavity mode on the single-photon purity of an InAs/GaAs QD. Our measurement demonstrates that the single-photon purity degrades when the QD emission resonates with the cavity mode. This negative influence of the planar cavity is mainly caused by the cavity feeding effect.
  • The effects of hydrostatic pressure (0--110 kbar) on the energy levels of bulk Zn[sub 0.86]Cd[sub 0.14]Se in the form of a 1 [mu]m thick epilayer and a six period multiple quantum well comprised of 30 A wells of Zn[sub 0.79]Cd[sub 0.21]Se and 400 A barriers of ZnSe (both of which are grown on GaAs substrates by molecular beam epitaxy) are studied together in the same diamond anvil pressure cell at a temperature of 14 K, enabling us to accurately determine and compare the first and second order pressure coefficients for direct gap ZnCdSe transitions in the two samples. Theoretical calculationsmore » to determine the energy levels for the quantum well sample in the presence of interlayer strain and hydrostatic pressure are carried out using the finite element method in the eight-band [bold k] [bold mH] [bold p] model, clearly showing the necessity of including a pressure dependent shear deformation potential. The photoluminescence (PL) intensity is irreversibly quenched in both samples by a structural phase transition occurring in ZnCdSe around 105 kbar. The effects of hydrostatic pressure on the lattice vibrational modes in the Raman spectra of bulk ZnCdSe are also studied. [copyright] 1994 American Institute of Physics« less
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  • We report low-temperature transport measurements of a silicon metal-oxide-semiconductor (MOS) double quantum dot (DQD). In contrast to previously reported measurements of DQD's in Si MOS structures, our device has a lateral gate geometry very similar to that used by Petta et al. to demonstrate coherent manipulation of single electron spins. This gate design provides a high degree of tunability, allowing for independent control over individual dot occupation and tunnel barriers, as well as the ability to use nearby constrictions to sense dot charge occupation. Comparison of experimentally extracted capacitances between the dot and nearby gates with electrostatic modeling demonstrates themore » presence of disorder and the ability to partially compensate for this disorder by adjustment of gate voltages. We experimentally show gate-controlled tuning of the interdot coupling over a wide range of energies, an important step towards potential quantum computing applications.« less
  • Abstract not provided.