Thickness-dependent charge transport in few-layer MoS 2 field-effect transistors

Lin, Ming-Wei; Kravchenko, Ivan I.; Fowlkes, Jason; Li, Xufan; Puretzky, Alexander A.; Rouleau, Christopher M.; Geohegan, David B.; Xiao, Kai

doi:10.1088/0957-4484/27/16/165203

Title: Thickness-dependent charge transport in few-layer MoS ₂ field-effect transistors

Journal Article · Thu Mar 10 00:00:00 EST 2016 · Nanotechnology

DOI:https://doi.org/10.1088/0957-4484/27/16/165203· OSTI ID:1241432

Lin, Ming-Wei; Kravchenko, Ivan I.; Fowlkes, Jason; Li, Xufan; Puretzky, Alexander A.; Rouleau, Christopher M.; Geohegan, David B.; Xiao, Kai

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Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

OSTI ID:: 1241432

Journal Information:: Nanotechnology, Journal Name: Nanotechnology Vol. 27 Journal Issue: 16; ISSN 0957-4484

Publisher:: IOP PublishingCopyright Statement

Country of Publication:: United Kingdom

Language:: English

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Title: Thickness-dependent charge transport in few-layer MoS ₂ field-effect transistors