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Title: Thermoelectric devices and applications for the same

Abstract

High performance thin film thermoelectric couples and methods of making the same are disclosed. Such couples allow fabrication of at least microwatt to watt-level power supply devices operating at voltages greater than one volt even when activated by only small temperature differences.

Inventors:
; ; ; ;
Publication Date:
Research Org.:
Pacific Northwest National Lab. (PNNL), Richland, WA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1241309
Patent Number(s):
9,281,461
Application Number:
10/581,281
Assignee:
Battelle Memorial Institute (Richland, WA) PNNL
DOE Contract Number:  
AC05-76RL01830
Resource Type:
Patent
Resource Relation:
Patent File Date: 2004 Dec 02
Country of Publication:
United States
Language:
English
Subject:
30 DIRECT ENERGY CONVERSION; 36 MATERIALS SCIENCE; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS

Citation Formats

Olsen, Larry C., DeSteese, John G., Martin, Peter M., Johnston, John W., and Peters, Timothy J. Thermoelectric devices and applications for the same. United States: N. p., 2016. Web.
Olsen, Larry C., DeSteese, John G., Martin, Peter M., Johnston, John W., & Peters, Timothy J. Thermoelectric devices and applications for the same. United States.
Olsen, Larry C., DeSteese, John G., Martin, Peter M., Johnston, John W., and Peters, Timothy J. Tue . "Thermoelectric devices and applications for the same". United States. https://www.osti.gov/servlets/purl/1241309.
@article{osti_1241309,
title = {Thermoelectric devices and applications for the same},
author = {Olsen, Larry C. and DeSteese, John G. and Martin, Peter M. and Johnston, John W. and Peters, Timothy J.},
abstractNote = {High performance thin film thermoelectric couples and methods of making the same are disclosed. Such couples allow fabrication of at least microwatt to watt-level power supply devices operating at voltages greater than one volt even when activated by only small temperature differences.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2016},
month = {3}
}

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Works referenced in this record:

Thermoelectric properties of Tl9BiTe6
journal, March 2003

  • Yamanaka, Shinsuke; Kosuga, Atsuko; Kurosaki, Ken
  • Journal of Alloys and Compounds, Vol. 352, Issue 1-2, p. 275-278
  • DOI: 10.1016/S0925-8388(02)01114-3

Thermal conductivity and ballistic-phonon transport in the cross-plane direction of superlattices
journal, June 1998


Effect of deposition temperature on the structural and thermoelectric properties of bismuth telluride thin films grown by co-sputtering
journal, July 2006

  • Kim, Dong-Ho; Byon, Eungsun; Lee, Gun-Hwan
  • Thin Solid Films, Vol. 510, Issue 1-2, p. 148-153
  • DOI: 10.1016/j.tsf.2005.12.306

Microstructural changes in a monostable chalcogenide switching glass
journal, April 1979

  • Allinson, D. L.; Barry, T. I.; Clinton, D. J.
  • Journal of Non-Crystalline Solids, Vol. 31, Issue 3, p. 307-331
  • DOI: 10.1016/0022-3093(79)90144-3